AP04N70BS-H Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP04N70BS-H 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 62.5 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 700 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 9 nS
Cossⓘ - Capacitancia de salida: 75 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2.4 Ohm
Encapsulados: TO263
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AP04N70BS-H datasheet
ap04n70bs-h.pdf
AP04N70BS-H-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 700V D Fast Switching Characteristic RDS(ON) 2.4 Simple Drive Requirement ID 4A G RoHS Compliant & Halogen-Free S Description AP04N70B series are from Advanced Power innovated design and G D S TO-263(S) silicon process technology
ap04n70bs-h-hf.pdf
AP04N70BS-H-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 700V D Fast Switching Characteristic RDS(ON) 2.4 Simple Drive Requirement ID 4A G RoHS Compliant & Halogen-Free S Description AP04N70 series are specially designed as main switching devices for G D S TO-263(S) universal 90 265VAC
ap04n70bi-hf.pdf
AP04N70BI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600V D Fast Switching Characteristic RDS(ON) 2.4 Simple Drive Requirement ID 4A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedi
ap04n70bi-a.pdf
AP04N70BI-A RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 650V D Fast Switching Characteristic RDS(ON) 2.4 Simple Drive Requirement ID 4A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistan
Otros transistores... AP09T10GH, AP09N20BGH, AP0603GH, AP05N50EJ, AP05N50EH, AP05N20GJ, AP05N20GI, AP05N20GH, IRFB4110, AP02N90JB, AP02N90J, AP02N90H, AP01L60T-H, AP01L60H-A-HF, AP01L60H-H, AP01L60J-A-HF, AP01L60J-H
History: SI5486DU
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