AP04N70BS-H - аналоги и даташиты транзистора

 

AP04N70BS-H - Даташиты. Аналоги. Основные параметры


   Наименование производителя: AP04N70BS-H
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 62.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 700 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 4 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 9 ns
   Cossⓘ - Выходная емкость: 75 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 2.4 Ohm
   Тип корпуса: TO263

 Аналог (замена) для AP04N70BS-H

 

AP04N70BS-H Datasheet (PDF)

 ..1. Size:170K  ape
 ap04n70bs-h.pdf pdf_icon

AP04N70BS-H

AP04N70BS-H-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 700V D Fast Switching Characteristic RDS(ON) 2.4 Simple Drive Requirement ID 4A G RoHS Compliant & Halogen-Free S Description AP04N70B series are from Advanced Power innovated design and G D S TO-263(S) silicon process technology

 0.1. Size:58K  ape
 ap04n70bs-h-hf.pdf pdf_icon

AP04N70BS-H

AP04N70BS-H-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 700V D Fast Switching Characteristic RDS(ON) 2.4 Simple Drive Requirement ID 4A G RoHS Compliant & Halogen-Free S Description AP04N70 series are specially designed as main switching devices for G D S TO-263(S) universal 90 265VAC

 6.1. Size:70K  ape
 ap04n70bi-hf.pdf pdf_icon

AP04N70BS-H

AP04N70BI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600V D Fast Switching Characteristic RDS(ON) 2.4 Simple Drive Requirement ID 4A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedi

 6.2. Size:105K  ape
 ap04n70bi-a.pdf pdf_icon

AP04N70BS-H

AP04N70BI-A RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 650V D Fast Switching Characteristic RDS(ON) 2.4 Simple Drive Requirement ID 4A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistan

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... AP09T10GH , AP09N20BGH , AP0603GH , AP05N50EJ , AP05N50EH , AP05N20GJ , AP05N20GI , AP05N20GH , IRFB4110 , AP02N90JB , AP02N90J , AP02N90H , AP01L60T-H , AP01L60H-A-HF , AP01L60H-H , AP01L60J-A-HF , AP01L60J-H .

History: IRFF9110 | R6006JNX | R6007JNJ | AP0603GH | AP01L60J-H | IRFD420

 

 
Back to Top

 


 
.