AP04N70BS-H datasheet, аналоги, основные параметры

Наименование производителя: AP04N70BS-H  📄📄 

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 62.5 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 700 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 4 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 9 ns

Cossⓘ - Выходная емкость: 75 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 2.4 Ohm

Тип корпуса: TO263

  📄📄 Копировать 

Аналог (замена) для AP04N70BS-H

- подборⓘ MOSFET транзистора по параметрам

 

AP04N70BS-H даташит

 ..1. Size:170K  ape
ap04n70bs-h.pdfpdf_icon

AP04N70BS-H

AP04N70BS-H-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 700V D Fast Switching Characteristic RDS(ON) 2.4 Simple Drive Requirement ID 4A G RoHS Compliant & Halogen-Free S Description AP04N70B series are from Advanced Power innovated design and G D S TO-263(S) silicon process technology

 0.1. Size:58K  ape
ap04n70bs-h-hf.pdfpdf_icon

AP04N70BS-H

AP04N70BS-H-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 700V D Fast Switching Characteristic RDS(ON) 2.4 Simple Drive Requirement ID 4A G RoHS Compliant & Halogen-Free S Description AP04N70 series are specially designed as main switching devices for G D S TO-263(S) universal 90 265VAC

 6.1. Size:70K  ape
ap04n70bi-hf.pdfpdf_icon

AP04N70BS-H

AP04N70BI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600V D Fast Switching Characteristic RDS(ON) 2.4 Simple Drive Requirement ID 4A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedi

 6.2. Size:105K  ape
ap04n70bi-a.pdfpdf_icon

AP04N70BS-H

AP04N70BI-A RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 650V D Fast Switching Characteristic RDS(ON) 2.4 Simple Drive Requirement ID 4A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistan

Другие IGBT... AP09T10GH, AP09N20BGH, AP0603GH, AP05N50EJ, AP05N50EH, AP05N20GJ, AP05N20GI, AP05N20GH, IRFB4110, AP02N90JB, AP02N90J, AP02N90H, AP01L60T-H, AP01L60H-A-HF, AP01L60H-H, AP01L60J-A-HF, AP01L60J-H