AP02N90J Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP02N90J 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 62.5 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 900 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 1.9 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 5 nS
Cossⓘ - Capacitancia de salida: 40 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 7.2 Ohm
Encapsulados: TO251
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AP02N90J datasheet
ap02n90j.pdf
AP02N90H/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 900V D Low On-resistance RDS(ON) 7.2 Fast Switching Characteristics ID 1.9A RoHS Compliant & Halogen-Free G S Description AP02N90 series are from Advanced Power innovated design and silicon G process technology to achieve the
ap02n90jb.pdf
AP02N90JB Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 900V D Fast Switching Characteristic RDS(ON) 7.2 Simple Drive Requirement ID 1.9A RoHS Compliant & Halogen-Free G S Description AP02N90 series are from Advanced Power innovated design and silicon process technology to achieve the lowest
ap02n90h-hf ap02n90j-hf.pdf
AP02N90H/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 900V D Low On-resistance RDS(ON) 7.2 Fast Switching Characteristics ID 1.9A RoHS Compliant & Halogen-Free G S Description Advanced Power MOSFETs from APEC provide the G designer with the best combination of fast switching, D
ap02n90h.pdf
AP02N90H/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 900V D Low On-resistance RDS(ON) 7.2 Fast Switching Characteristics ID 1.9A RoHS Compliant & Halogen-Free G S Description AP02N90 series are from Advanced Power innovated design and silicon G process technology to achieve the
Otros transistores... AP0603GH, AP05N50EJ, AP05N50EH, AP05N20GJ, AP05N20GI, AP05N20GH, AP04N70BS-H, AP02N90JB, IRFP260N, AP02N90H, AP01L60T-H, AP01L60H-A-HF, AP01L60H-H, AP01L60J-A-HF, AP01L60J-H, AP01L60T-HF, AP01N40J
History: MSQ4N60 | WST2301A | MSK1N3 | MSF4N60L | PSMN010-80YL | MSU2N70 | AP1004CMX
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