AP02N90J MOSFET. Datasheet pdf. Equivalent
Type Designator: AP02N90J
Marking Code: 02N90J
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 62.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 1.9 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 12 nC
trⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 40 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 7.2 Ohm
Package: TO251
AP02N90J Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AP02N90J Datasheet (PDF)
ap02n90j.pdf
AP02N90H/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 900VD Low On-resistance RDS(ON) 7.2 Fast Switching Characteristics ID 1.9A RoHS Compliant & Halogen-FreeGSDescriptionAP02N90 series are from Advanced Power innovated design and siliconGprocess technology to achieve the
ap02n90jb.pdf
AP02N90JBHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 900VD Fast Switching Characteristic RDS(ON) 7.2 Simple Drive Requirement ID 1.9A RoHS Compliant & Halogen-FreeGSDescriptionAP02N90 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest
ap02n90h-hf ap02n90j-hf.pdf
AP02N90H/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 900VD Low On-resistance RDS(ON) 7.2 Fast Switching Characteristics ID 1.9A RoHS Compliant & Halogen-FreeGSDescriptionAdvanced Power MOSFETs from APEC provide theGdesigner with the best combination of fast switching, D
ap02n90h.pdf
AP02N90H/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 900VD Low On-resistance RDS(ON) 7.2 Fast Switching Characteristics ID 1.9A RoHS Compliant & Halogen-FreeGSDescriptionAP02N90 series are from Advanced Power innovated design and siliconGprocess technology to achieve the
ap02n90i.pdf
AP02N90IPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 900V Isolation Full Package RDS(ON) 7.2 Fast Switching Characteristics ID 1.9AG RoHS compliantSDescriptionThe TO-220CFM package is universally preferred for all commercial-industrial applications. The device is suited for s
ap02n90p-hf.pdf
AP02N90P-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 900V Low On-resistance RDS(ON) 7.2 Fast Switching Characteristics ID 1.9A RoHS Compliant & Halogen-FreeGD TO-220DSDescriptionAdvanced Power MOSFETs from APEC provide the designerwith the best combination of fast switching
ap02n90p.pdf
AP02N90P-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 900V Low On-resistance RDS(ON) 7.2 Fast Switching Characteristics ID 1.9A RoHS Compliant & Halogen-FreeGD TO-220DSDescriptionAP02N90 series are from Advanced Power innovated design andsilicon process technology to achieve
ap02n90i-hf.pdf
AP02N90I-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 900V Isolation Full Package RDS(ON) 7.2 Fast Switching Characteristics ID 1.9AG RoHS Compliant & Halogen-FreeSDescriptionThe TO-220CFM package is universally preferred for all commercial-industrial applications. The device
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