AP02N60P Todos los transistores

 

AP02N60P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP02N60P
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 39 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 12 nS
   Cossⓘ - Capacitancia de salida: 27 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 8 Ohm
   Paquete / Cubierta: TO220
 

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AP02N60P Datasheet (PDF)

 ..1. Size:69K  ape
 ap02n60p.pdf pdf_icon

AP02N60P

AP02N60PPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETRepetitive Avalanche Rated BVDSS 600V Fast Switching RDS(ON) 8 Simple Drive Requirement ID 2A RoHS CompliantGDTO-220SDescriptionDThe TO-220 package is universally preferred for all commerci

 0.1. Size:56K  ape
 ap02n60p-a-hf.pdf pdf_icon

AP02N60P

AP02N60P-A-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 650V Fast Switching Characteristics RDS(ON) 8 Simple Drive Requirement ID 2A RoHS Compliant & Halogen-FreeGD TO-220SDescriptionDThe TO-220 package is widely preferred for all commercial-industrialapplications. The device is

 0.2. Size:55K  ape
 ap02n60p-hf.pdf pdf_icon

AP02N60P

AP02N60P-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600VD Fast Switching Characteristics RDS(ON) 8 Simple Drive Requirement ID 2AG Halogen Free & RoHS CompliantSDescriptionThe TO-220 package is universally preferred for all commercial-Gindustrial applications. The device is sui

 7.1. Size:102K  ape
 ap02n60h ap02n60j.pdf pdf_icon

AP02N60P

AP02N60H/JRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge BVDSS 600VD 100% Avalanche Test RDS(ON) 8 Simple Drive Requirement ID 1.6AGSDescriptionGDTO-252(H)SThe TO-252 package is widely preferred for all commercial-industrialsurface mount applications and suited for AC/DC converters. Theth

MOSTRAR MÁS

Otros transistores... AP01L60J-A-HF , AP01L60J-H , AP01L60T-HF , AP01N40J , AP02N60H-HF , AP02N60H-H-HF , AP02N60J-HF , AP02N60J-H-HF , K3569 , AP02N60P-HF , AP02N70EJ-HF , AP02N90I-HF , AP03N70H-H-HF , AP03N70I-H-HF , AP03N70J-H-HF , AP0403GH , AP04N60I-HF .

History: DH300N08B

 

 
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