All MOSFET. AP02N60P Datasheet

 

AP02N60P MOSFET. Datasheet pdf. Equivalent


   Type Designator: AP02N60P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 39 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 14 nC
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 27 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 8 Ohm
   Package: TO220

 AP02N60P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AP02N60P Datasheet (PDF)

 ..1. Size:69K  ape
ap02n60p.pdf

AP02N60P
AP02N60P

AP02N60PPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETRepetitive Avalanche Rated BVDSS 600V Fast Switching RDS(ON) 8 Simple Drive Requirement ID 2A RoHS CompliantGDTO-220SDescriptionDThe TO-220 package is universally preferred for all commerci

 0.1. Size:56K  ape
ap02n60p-a-hf.pdf

AP02N60P
AP02N60P

AP02N60P-A-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 650V Fast Switching Characteristics RDS(ON) 8 Simple Drive Requirement ID 2A RoHS Compliant & Halogen-FreeGD TO-220SDescriptionDThe TO-220 package is widely preferred for all commercial-industrialapplications. The device is

 0.2. Size:55K  ape
ap02n60p-hf.pdf

AP02N60P
AP02N60P

AP02N60P-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600VD Fast Switching Characteristics RDS(ON) 8 Simple Drive Requirement ID 2AG Halogen Free & RoHS CompliantSDescriptionThe TO-220 package is universally preferred for all commercial-Gindustrial applications. The device is sui

 7.1. Size:102K  ape
ap02n60h ap02n60j.pdf

AP02N60P
AP02N60P

AP02N60H/JRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge BVDSS 600VD 100% Avalanche Test RDS(ON) 8 Simple Drive Requirement ID 1.6AGSDescriptionGDTO-252(H)SThe TO-252 package is widely preferred for all commercial-industrialsurface mount applications and suited for AC/DC converters. Theth

 7.2. Size:108K  ape
ap02n60i.pdf

AP02N60P
AP02N60P

AP02N60IRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600VD Fast Switching RDS(ON) 8 Simple Drive Requirement ID 2AGSDescriptionThe TO-220CFM package is widely preferred for all commercial-industrial applications. The device is suited for switch mode powersupplies ,AC-DC converters and

 7.3. Size:175K  ape
ap02n60i-a.pdf

AP02N60P
AP02N60P

AP02N60I-A-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 650VD Fast Switching Characteristic RDS(ON) 8 Simple Drive Requirement ID 2AG RoHS Compliant & Halogen-FreeSDescriptionAP02N60 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest

 7.4. Size:131K  ape
ap02n60t-h-hf.pdf

AP02N60P
AP02N60P

AP02N60T-H-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 700VD Fast Switching Characteristics RDS(ON) 9 Simple Drive Requirement ID 0.3AG RoHS Compliant & Halogen-FreeSSDescriptionDAdvanced Power MOSFETs utilized advanced processing techniques toGachieve the lowest possible o

 7.5. Size:56K  ape
ap02n60i-a-hf.pdf

AP02N60P
AP02N60P

AP02N60I-A-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 650VD Fast Switching Characteristic RDS(ON) 8 Simple Drive Requirement ID 2AG RoHS Compliant & Halogen-FreeSDescriptionThe TO-220CFM package is widely preferred for all commercial-industrial applications. The device is suited

 7.6. Size:246K  ape
ap02n60h-h ap02n60j-h.pdf

AP02N60P
AP02N60P

AP02N60H/J-HRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 700VD Lower Gate Charge RDS(ON) 8.8 Fast Switching Characteristic ID 1.4AG Simple Drive RequirementSDescriptionGDS TO-252(H)The TO-252 package is widely preferred for all commercial-industrialsurface mount applications

 7.7. Size:65K  ape
ap02n60h-h-hf ap02n60j-h-hf.pdf

AP02N60P
AP02N60P

AP02N60H/J-H-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS 700VD Fast Switching Characteristic RDS(ON) 8.8 Simple Drive Requirement ID 1.4AG RoHS CompliantSDescriptionGDS TO-252(H)The TO-252 package is widely preferred for all commercial-industrialsurface mount applications and

 7.8. Size:98K  ape
ap02n60h-hf ap02n60j-hf.pdf

AP02N60P
AP02N60P

AP02N60H/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600VD Lower Gate Charge RDS(ON) 8 Simple Drive Requirement ID 1.6AG RoHS CompliantSDescriptionGDTO-252(H)SThe TO-252 package is widely preferred for all commercial-industrialsurface mount applications and suited for AC

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

 

 
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