AP02N70EJ-HF Todos los transistores

 

AP02N70EJ-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP02N70EJ-HF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 45 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 700 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 1.6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 8 nS
   Cossⓘ - Capacitancia de salida: 30 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 7 Ohm
   Paquete / Cubierta: TO251

 Búsqueda de reemplazo de MOSFET AP02N70EJ-HF

 

Principales características: AP02N70EJ-HF

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AP02N70EJ-HF

AP02N70EJ-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 700V D ESD Improved Capability RDS(ON) 7 G Simple Drive Requirement ID 1.6A RoHS Compliant S G Description D S TO-251(J) AP02N70 from APEC provide the designer with the best combination of fast switching , low on-resistance and c

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AP02N70EJ-HF

AP02N70EJ RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 700V D ESD Improved Capability RDS(ON) 7 G Simple Drive Requirement ID 1.6A S G Description D TO-251(J) S AP02N70 from APEC provide the designer with the best combination of fast switching , low on-resistance and cost-effectiveness. Th

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AP02N70EJ-HF

AP02N70EI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 700V D ESD Improved Capability RDS(ON) 7 G Simple Drive Requirement ID 1.6A RoHS Compliant & Halogen-Free S Description AP02N70 from APEC provide the designer with the best G D combination of fast switching , low on-resistance and

 9.1. Size:197K  ape
ap02n90h.pdf pdf_icon

AP02N70EJ-HF

AP02N90H/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 900V D Low On-resistance RDS(ON) 7.2 Fast Switching Characteristics ID 1.9A RoHS Compliant & Halogen-Free G S Description AP02N90 series are from Advanced Power innovated design and silicon G process technology to achieve the

Otros transistores... AP01L60T-HF , AP01N40J , AP02N60H-HF , AP02N60H-H-HF , AP02N60J-HF , AP02N60J-H-HF , AP02N60P , AP02N60P-HF , 2SK3878 , AP02N90I-HF , AP03N70H-H-HF , AP03N70I-H-HF , AP03N70J-H-HF , AP0403GH , AP04N60I-HF , AP04N60J-HF , AP04N70BI-A-HF .

History: STW70N10F4

 

 
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