AP02N70EJ-HF - аналоги и даташиты транзистора

 

AP02N70EJ-HF - Даташиты. Аналоги. Основные параметры


   Наименование производителя: AP02N70EJ-HF
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 45 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 700 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 1.6 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 8 ns
   Cossⓘ - Выходная емкость: 30 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 7 Ohm
   Тип корпуса: TO251

 Аналог (замена) для AP02N70EJ-HF

 

AP02N70EJ-HF Datasheet (PDF)

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 ap02n70ej-hf.pdf pdf_icon

AP02N70EJ-HF

AP02N70EJ-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 700V D ESD Improved Capability RDS(ON) 7 G Simple Drive Requirement ID 1.6A RoHS Compliant S G Description D S TO-251(J) AP02N70 from APEC provide the designer with the best combination of fast switching , low on-resistance and c

 5.1. Size:108K  ape
 ap02n70ej.pdf pdf_icon

AP02N70EJ-HF

AP02N70EJ RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 700V D ESD Improved Capability RDS(ON) 7 G Simple Drive Requirement ID 1.6A S G Description D TO-251(J) S AP02N70 from APEC provide the designer with the best combination of fast switching , low on-resistance and cost-effectiveness. Th

 6.1. Size:55K  ape
 ap02n70ei-hf.pdf pdf_icon

AP02N70EJ-HF

AP02N70EI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 700V D ESD Improved Capability RDS(ON) 7 G Simple Drive Requirement ID 1.6A RoHS Compliant & Halogen-Free S Description AP02N70 from APEC provide the designer with the best G D combination of fast switching , low on-resistance and

 9.1. Size:197K  ape
 ap02n90h.pdf pdf_icon

AP02N70EJ-HF

AP02N90H/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 900V D Low On-resistance RDS(ON) 7.2 Fast Switching Characteristics ID 1.9A RoHS Compliant & Halogen-Free G S Description AP02N90 series are from Advanced Power innovated design and silicon G process technology to achieve the

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... AP01L60T-HF , AP01N40J , AP02N60H-HF , AP02N60H-H-HF , AP02N60J-HF , AP02N60J-H-HF , AP02N60P , AP02N60P-HF , 2SK3878 , AP02N90I-HF , AP03N70H-H-HF , AP03N70I-H-HF , AP03N70J-H-HF , AP0403GH , AP04N60I-HF , AP04N60J-HF , AP04N70BI-A-HF .

History: AP04N70BI-HF | AP02N60P-HF

 

 
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