AP02N70EJ-HF datasheet, аналоги, основные параметры
Наименование производителя: AP02N70EJ-HF 📄📄
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 45 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 700 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 1.6 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 8 ns
Cossⓘ - Выходная емкость: 30 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 7 Ohm
Тип корпуса: TO251
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Аналог (замена) для AP02N70EJ-HF
- подборⓘ MOSFET транзистора по параметрам
AP02N70EJ-HF даташит
..1. Size:58K ape
ap02n70ej-hf.pdf 
AP02N70EJ-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 700V D ESD Improved Capability RDS(ON) 7 G Simple Drive Requirement ID 1.6A RoHS Compliant S G Description D S TO-251(J) AP02N70 from APEC provide the designer with the best combination of fast switching , low on-resistance and c
5.1. Size:108K ape
ap02n70ej.pdf 
AP02N70EJ RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 700V D ESD Improved Capability RDS(ON) 7 G Simple Drive Requirement ID 1.6A S G Description D TO-251(J) S AP02N70 from APEC provide the designer with the best combination of fast switching , low on-resistance and cost-effectiveness. Th
6.1. Size:55K ape
ap02n70ei-hf.pdf 
AP02N70EI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 700V D ESD Improved Capability RDS(ON) 7 G Simple Drive Requirement ID 1.6A RoHS Compliant & Halogen-Free S Description AP02N70 from APEC provide the designer with the best G D combination of fast switching , low on-resistance and
9.1. Size:197K ape
ap02n90h.pdf 
AP02N90H/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 900V D Low On-resistance RDS(ON) 7.2 Fast Switching Characteristics ID 1.9A RoHS Compliant & Halogen-Free G S Description AP02N90 series are from Advanced Power innovated design and silicon G process technology to achieve the
9.2. Size:39K ape
ap02n90i.pdf 
AP02N90I Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 900V Isolation Full Package RDS(ON) 7.2 Fast Switching Characteristics ID 1.9A G RoHS compliant S Description The TO-220CFM package is universally preferred for all commercial- industrial applications. The device is suited for s
9.3. Size:57K ape
ap02n90p-hf.pdf 
AP02N90P-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 900V Low On-resistance RDS(ON) 7.2 Fast Switching Characteristics ID 1.9A RoHS Compliant & Halogen-Free G D TO-220 D S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching
9.4. Size:157K ape
ap02n90p.pdf 
AP02N90P-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 900V Low On-resistance RDS(ON) 7.2 Fast Switching Characteristics ID 1.9A RoHS Compliant & Halogen-Free G D TO-220 D S Description AP02N90 series are from Advanced Power innovated design and silicon process technology to achieve
9.5. Size:56K ape
ap02n60p-a-hf.pdf 
AP02N60P-A-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 650V Fast Switching Characteristics RDS(ON) 8 Simple Drive Requirement ID 2A RoHS Compliant & Halogen-Free G D TO-220 S Description D The TO-220 package is widely preferred for all commercial-industrial applications. The device is
9.6. Size:194K ape
ap02n40h.pdf 
AP02N40H-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 400V Fast Switching Characteristic RDS(ON) 5 Simple Drive Requirement ID 1.6A G RoHS Compliant & Halogen-Free S G Description D TO-252(H) S AP02N40 series are from Advanced Power innovated design and silicon process technology to
9.7. Size:98K ape
ap02n40h-hf ap02n40j-hf.pdf 
AP02N40H/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 400V Fast Switching Characteristic RDS(ON) 5 Simple Drive Requirement ID 1.6A G RoHS Compliant & Halogen-Free S G Description D TO-252(H) S AP02N40 uses rugged design with the best combination of fast switching and cost-effecti
9.8. Size:139K ape
ap02n90jb.pdf 
AP02N90JB Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 900V D Fast Switching Characteristic RDS(ON) 7.2 Simple Drive Requirement ID 1.9A RoHS Compliant & Halogen-Free G S Description AP02N90 series are from Advanced Power innovated design and silicon process technology to achieve the lowest
9.9. Size:102K ape
ap02n60h ap02n60j.pdf 
AP02N60H/J RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 600V D 100% Avalanche Test RDS(ON) 8 Simple Drive Requirement ID 1.6A G S Description G D TO-252(H) S The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for AC/DC converters. The th
9.10. Size:108K ape
ap02n60i.pdf 
AP02N60I RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600V D Fast Switching RDS(ON) 8 Simple Drive Requirement ID 2A G S Description The TO-220CFM package is widely preferred for all commercial- industrial applications. The device is suited for switch mode power supplies ,AC-DC converters and
9.11. Size:92K ape
ap02n40p.pdf 
AP02N40P RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 400V Fast Switching Characteristic RDS(ON) 5 Simple Drive Requirement ID 1.6A G S Description G AP02N40 uses rugged design with the best combination of fast TO-220(P) D S switching and cost-effectiveness. The TO-220 package is widely
9.12. Size:69K ape
ap02n60p.pdf 
AP02N60P Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Repetitive Avalanche Rated BVDSS 600V Fast Switching RDS(ON) 8 Simple Drive Requirement ID 2A RoHS Compliant G D TO-220 S Description D The TO-220 package is universally preferred for all commerci
9.13. Size:62K ape
ap02n90h-hf ap02n90j-hf.pdf 
AP02N90H/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 900V D Low On-resistance RDS(ON) 7.2 Fast Switching Characteristics ID 1.9A RoHS Compliant & Halogen-Free G S Description Advanced Power MOSFETs from APEC provide the G designer with the best combination of fast switching, D
9.14. Size:92K ape
ap02n90i-hf.pdf 
AP02N90I-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 900V Isolation Full Package RDS(ON) 7.2 Fast Switching Characteristics ID 1.9A G RoHS Compliant & Halogen-Free S Description The TO-220CFM package is universally preferred for all commercial- industrial applications. The device
9.15. Size:94K ape
ap02n40k-hf.pdf 
AP02N40K-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 400V Fast Switching Characteristic RDS(ON) 5.5 Simple Drive Requirement ID 0.45A G RoHS Compliant & Halogen-Free S D Description AP02N40 uses rugged design with the best combination of fast S switching and cost-effectiveness. D G
9.16. Size:55K ape
ap02n60p-hf.pdf 
AP02N60P-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600V D Fast Switching Characteristics RDS(ON) 8 Simple Drive Requirement ID 2A G Halogen Free & RoHS Compliant S Description The TO-220 package is universally preferred for all commercial- G industrial applications. The device is sui
9.17. Size:175K ape
ap02n60i-a.pdf 
AP02N60I-A-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 650V D Fast Switching Characteristic RDS(ON) 8 Simple Drive Requirement ID 2A G RoHS Compliant & Halogen-Free S Description AP02N60 series are from Advanced Power innovated design and silicon process technology to achieve the lowest
9.18. Size:131K ape
ap02n60t-h-hf.pdf 
AP02N60T-H-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 700V D Fast Switching Characteristics RDS(ON) 9 Simple Drive Requirement ID 0.3A G RoHS Compliant & Halogen-Free S S Description D Advanced Power MOSFETs utilized advanced processing techniques to G achieve the lowest possible o
9.19. Size:56K ape
ap02n60i-a-hf.pdf 
AP02N60I-A-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 650V D Fast Switching Characteristic RDS(ON) 8 Simple Drive Requirement ID 2A G RoHS Compliant & Halogen-Free S Description The TO-220CFM package is widely preferred for all commercial- industrial applications. The device is suited
9.20. Size:246K ape
ap02n60h-h ap02n60j-h.pdf 
AP02N60H/J-H RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 700V D Lower Gate Charge RDS(ON) 8.8 Fast Switching Characteristic ID 1.4A G Simple Drive Requirement S Description G D S TO-252(H) The TO-252 package is widely preferred for all commercial-industrial surface mount applications
9.21. Size:65K ape
ap02n60h-h-hf ap02n60j-h-hf.pdf 
AP02N60H/J-H-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS 700V D Fast Switching Characteristic RDS(ON) 8.8 Simple Drive Requirement ID 1.4A G RoHS Compliant S Description G D S TO-252(H) The TO-252 package is widely preferred for all commercial-industrial surface mount applications and
9.22. Size:162K ape
ap02n90j.pdf 
AP02N90H/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 900V D Low On-resistance RDS(ON) 7.2 Fast Switching Characteristics ID 1.9A RoHS Compliant & Halogen-Free G S Description AP02N90 series are from Advanced Power innovated design and silicon G process technology to achieve the
9.23. Size:93K ape
ap02n40i-hf.pdf 
AP02N40I-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 400V Fast Switching Characteristic RDS(ON) 5 Simple Drive Requirement ID 1.6A G RoHS Compliant & Halogen-Free S Description AP02N40 uses rugged design with the best combination of fast G switching and cost-effectiveness. D TO-220CF
9.24. Size:98K ape
ap02n60h-hf ap02n60j-hf.pdf 
AP02N60H/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600V D Lower Gate Charge RDS(ON) 8 Simple Drive Requirement ID 1.6A G RoHS Compliant S Description G D TO-252(H) S The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for AC
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