AP03N70J-H-HF Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP03N70J-H-HF 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 54.3 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 700 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 2.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 6 nS
Cossⓘ - Capacitancia de salida: 50 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 4.4 Ohm
Encapsulados: TO251
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AP03N70J-H-HF datasheet
ap03n70h-h-hf ap03n70j-h-hf.pdf
AP03N70H/J-H-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Rated BVDSS 700V D Fast Switching Speed RDS(ON) 4.4 Simple Drive Requirement ID 2.5A G RoHS Compliant S Description The TO-252 package is widely preferred for all commercial- industrial surface mount applications and suited for AC/DC G con
ap03n70j-h.pdf
AP03N70H/J-H-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Rated BVDSS 700V D Fast Switching Speed RDS(ON) 4.4 Simple Drive Requirement ID 2.5A G RoHS Compliant S Description AP03N70 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resi
ap03n70h-a-hf ap03n70j-a-hf.pdf
AP03N70H/J-A-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 650V D Fast Switching Characteristic RDS(ON) 3.6 Simple Drive Requirement ID 3.3A G RoHS Compliant & Halogen-Free S Description G The TO-252 package is widely preferred for all commercial-industrial D TO-252(H) S surface mount
ap03n70j.pdf
AP03N70H/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600V D Fast Switching Speed RDS(ON) 3.6 Simple Drive Requirement ID 3.3A G RoHS Compliant S Description AP03N70 series are from Advanced Power innovated design and silicon G D process technology to achieve the lowest possible on-r
Otros transistores... AP02N60J-HF, AP02N60J-H-HF, AP02N60P, AP02N60P-HF, AP02N70EJ-HF, AP02N90I-HF, AP03N70H-H-HF, AP03N70I-H-HF, IRF4905, AP0403GH, AP04N60I-HF, AP04N60J-HF, AP04N70BI-A-HF, AP04N70BI-HF, AP05FN50I, AP05FN50I-HF, AP05N50I-HF
History: MSW20N50 | MSK7N80F | IRFAC42 | WSR80N08 | SI5515CDC | AP0904GP-HF | AP10N012P
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