AP03N70J-H-HF Todos los transistores

 

AP03N70J-H-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP03N70J-H-HF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 54.3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 700 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 2.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 6 nS
   Cossⓘ - Capacitancia de salida: 50 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 4.4 Ohm
   Paquete / Cubierta: TO251

 Búsqueda de reemplazo de MOSFET AP03N70J-H-HF

 

Principales características: AP03N70J-H-HF

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AP03N70J-H-HF

AP03N70H/J-H-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Rated BVDSS 700V D Fast Switching Speed RDS(ON) 4.4 Simple Drive Requirement ID 2.5A G RoHS Compliant S Description The TO-252 package is widely preferred for all commercial- industrial surface mount applications and suited for AC/DC G con

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AP03N70J-H-HF

AP03N70H/J-H-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Rated BVDSS 700V D Fast Switching Speed RDS(ON) 4.4 Simple Drive Requirement ID 2.5A G RoHS Compliant S Description AP03N70 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resi

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ap03n70h-a-hf ap03n70j-a-hf.pdf pdf_icon

AP03N70J-H-HF

AP03N70H/J-A-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 650V D Fast Switching Characteristic RDS(ON) 3.6 Simple Drive Requirement ID 3.3A G RoHS Compliant & Halogen-Free S Description G The TO-252 package is widely preferred for all commercial-industrial D TO-252(H) S surface mount

 6.1. Size:202K  ape
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AP03N70J-H-HF

AP03N70H/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600V D Fast Switching Speed RDS(ON) 3.6 Simple Drive Requirement ID 3.3A G RoHS Compliant S Description AP03N70 series are from Advanced Power innovated design and silicon G D process technology to achieve the lowest possible on-r

Otros transistores... AP02N60J-HF , AP02N60J-H-HF , AP02N60P , AP02N60P-HF , AP02N70EJ-HF , AP02N90I-HF , AP03N70H-H-HF , AP03N70I-H-HF , IRF4905 , AP0403GH , AP04N60I-HF , AP04N60J-HF , AP04N70BI-A-HF , AP04N70BI-HF , AP05FN50I , AP05FN50I-HF , AP05N50I-HF .

 

 
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