AP03N70J-H-HF. Аналоги и основные параметры
Наименование производителя: AP03N70J-H-HF
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 54.3 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 700 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 2.5 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
|VGSth|ⓘ - Пороговое напряжение включения: 4 V
Qg ⓘ - Общий заряд затвора: 12 nC
tr ⓘ - Время нарастания: 6 ns
Cossⓘ - Выходная емкость: 50 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 4.4 Ohm
Тип корпуса: TO251
Аналог (замена) для AP03N70J-H-HF
- подборⓘ MOSFET транзистора по параметрам
AP03N70J-H-HF даташит
ap03n70h-h-hf ap03n70j-h-hf.pdf
AP03N70H/J-H-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Rated BVDSS 700V D Fast Switching Speed RDS(ON) 4.4 Simple Drive Requirement ID 2.5A G RoHS Compliant S Description The TO-252 package is widely preferred for all commercial- industrial surface mount applications and suited for AC/DC G con
ap03n70j-h.pdf
AP03N70H/J-H-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Rated BVDSS 700V D Fast Switching Speed RDS(ON) 4.4 Simple Drive Requirement ID 2.5A G RoHS Compliant S Description AP03N70 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resi
ap03n70h-a-hf ap03n70j-a-hf.pdf
AP03N70H/J-A-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 650V D Fast Switching Characteristic RDS(ON) 3.6 Simple Drive Requirement ID 3.3A G RoHS Compliant & Halogen-Free S Description G The TO-252 package is widely preferred for all commercial-industrial D TO-252(H) S surface mount
ap03n70j.pdf
AP03N70H/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600V D Fast Switching Speed RDS(ON) 3.6 Simple Drive Requirement ID 3.3A G RoHS Compliant S Description AP03N70 series are from Advanced Power innovated design and silicon G D process technology to achieve the lowest possible on-r
Другие IGBT... AP02N60J-HF, AP02N60J-H-HF, AP02N60P, AP02N60P-HF, AP02N70EJ-HF, AP02N90I-HF, AP03N70H-H-HF, AP03N70I-H-HF, IRF4905, AP0403GH, AP04N60I-HF, AP04N60J-HF, AP04N70BI-A-HF, AP04N70BI-HF, AP05FN50I, AP05FN50I-HF, AP05N50I-HF
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Список транзисторов
Обновления
MOSFET: AUW033N08BG | AUW025N10 | AUR030N10 | AUR020N10 | AUR020N085 | AUR014N10 | AUP074N10 | AUP065N10 | AUP062N08BG | AUP060N08AG | HYG053N10NS1B | HYG053N10NS1P | AP220N04T | AP220N04P | QM3126M3 | AUP060N055
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