AP15N03GJ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AP15N03GJ
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 26 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 15 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 4.6 nC
   trⓘ - Tiempo de subida: 22.5 nS
   Cossⓘ - Capacitancia de salida: 107 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.08 Ohm
   Paquete / Cubierta: TO251

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AP15N03GJ Datasheet (PDF)

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ap15n03gj.pdf

AP15N03GH/JRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS 30V Simple Drive Requirement RDS(ON) 80m Fast Switching ID 15AGSDescriptionGTO-252 package is widely preferred for all commercial-industrialDSTO-252(H)surface mount applications and suited for low voltage applicationssuch as

6.1. Size:216K ape
ap15n03ghj-hf.pdf

AP15N03GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS 30V Simple Drive Requirement RDS(ON) 80m Fast Switching ID 15AG RoHS CompliantSDescriptionGTO-252 package is widely preferred for all commercial-industrialDSTO-252(H)surface mount applications and suited for low voltage a

6.2. Size:93K ape
ap15n03gi.pdf

AP15N03GIRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS 30V Simple Drive Requirement RDS(ON) 80m Fast Switching Characteristic ID 15AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistance and

6.3. Size:233K ape
ap15n03gh.pdf

AP15N03GH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS 30V Simple Drive Requirement RDS(ON) 80m Fast Switching ID 15AG RoHS CompliantSDescriptionAP15N03 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest possible on-GDSTO-252(H)

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