AP15N03GJ Todos los transistores

 

AP15N03GJ MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP15N03GJ

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 26 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 15 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 22.5 nS

Cossⓘ - Capacitancia de salida: 107 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.08 Ohm

Encapsulados: TO251

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AP15N03GJ datasheet

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 ap15n03gj.pdf pdf_icon

AP15N03GJ

AP15N03GH/J RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 30V Simple Drive Requirement RDS(ON) 80m Fast Switching ID 15A G S Description G TO-252 package is widely preferred for all commercial-industrial D S TO-252(H) surface mount applications and suited for low voltage applications such as

 6.1. Size:216K  ape
 ap15n03ghj-hf.pdf pdf_icon

AP15N03GJ

AP15N03GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 30V Simple Drive Requirement RDS(ON) 80m Fast Switching ID 15A G RoHS Compliant S Description G TO-252 package is widely preferred for all commercial-industrial D S TO-252(H) surface mount applications and suited for low voltage a

 6.2. Size:93K  ape
 ap15n03gi.pdf pdf_icon

AP15N03GJ

AP15N03GI RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 30V Simple Drive Requirement RDS(ON) 80m Fast Switching Characteristic ID 15A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and

 6.3. Size:233K  ape
 ap15n03gh.pdf pdf_icon

AP15N03GJ

AP15N03GH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 30V Simple Drive Requirement RDS(ON) 80m Fast Switching ID 15A G RoHS Compliant S Description AP15N03 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on- G D S TO-252(H)

MOSTRAR MÁS

Otros transistores... AP11N50I-HF , AP1203GH , AP1203GM , AP1333GU-HF , AP13N50W-HF , AP13P15GP , AP13P15GS , AP15N03GI , IRF1407 , AP15P10GP-HF , AP15P10GS-HF , AP15T03GJ , AP15T25H-HF , AP16N50P-HF , AP16N50W-HF , AP1801GU , AP1802GU .

History: IRF332 | AP3P9R0M | AP70T03GJ | AP1A003GMT-HF | 2SK2371 | AP3P9R0P | MMD80R900QZRH

 

 

 

 

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