AP15N03GJ - аналоги и даташиты транзистора

 

AP15N03GJ - Даташиты. Аналоги. Основные параметры


   Наименование производителя: AP15N03GJ
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 26 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 15 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 22.5 ns
   Cossⓘ - Выходная емкость: 107 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.08 Ohm
   Тип корпуса: TO251

 Аналог (замена) для AP15N03GJ

 

AP15N03GJ Datasheet (PDF)

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 ap15n03gj.pdf pdf_icon

AP15N03GJ

AP15N03GH/J RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 30V Simple Drive Requirement RDS(ON) 80m Fast Switching ID 15A G S Description G TO-252 package is widely preferred for all commercial-industrial D S TO-252(H) surface mount applications and suited for low voltage applications such as

 6.1. Size:216K  ape
 ap15n03ghj-hf.pdf pdf_icon

AP15N03GJ

AP15N03GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 30V Simple Drive Requirement RDS(ON) 80m Fast Switching ID 15A G RoHS Compliant S Description G TO-252 package is widely preferred for all commercial-industrial D S TO-252(H) surface mount applications and suited for low voltage a

 6.2. Size:93K  ape
 ap15n03gi.pdf pdf_icon

AP15N03GJ

AP15N03GI RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 30V Simple Drive Requirement RDS(ON) 80m Fast Switching Characteristic ID 15A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and

 6.3. Size:233K  ape
 ap15n03gh.pdf pdf_icon

AP15N03GJ

AP15N03GH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 30V Simple Drive Requirement RDS(ON) 80m Fast Switching ID 15A G RoHS Compliant S Description AP15N03 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on- G D S TO-252(H)

ПОКАЗАТЬ ЕЩЁ

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