AP1801GU Todos los transistores

 ..1. Size:70K  ape
 ap1801gu.pdf

AP1801GU Pb Free Plating Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 2.5V gate drive BVDSS -20V D D Lower on-resistance RDS(ON) 70m D D G Surface mount package ID -4A S S S 2021-8 Description D Advanced Power MOSFETs utilized advanced processing techniques to achieve the

 9.1. Size:55K  ape
 ap1802gu.pdf

AP1802GU Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 2.5V gate drive BVDSS 20V D D Lower on-resistance RDS(ON) 32m D D Surface mount package ID 5.8A G S S S 2021-8 Description D Advanced Power MOSFETs utilized advanced processing techniques to achieve

 9.2. Size:746K  allpower
 ap180n03g.pdf

 9.3. Size:1530K  cn apm
 ap180n03d.pdf

AP180N03D 30V N-Channel Enhancement Mode MOSFET Description The AP180N03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =30V I =180A DS D R

 9.4. Size:1647K  cn apm
 ap180n03p ap180n03t.pdf

AP180N03PIT 30V N-Channel Enhancement Mode MOSFET Description The AP180N03P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =180 A DS D R

 9.5. Size:1493K  cn apm
 ap180n04nf.pdf

AP180N04NF 40V N-Channel Enhancement Mode MOSFET Description The AP180N04NF uses advanced APM-SGT V technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =180A DS D R

 9.6. Size:1759K  cn apm
 ap180n08p ap180n08t.pdf

AP180N08PIT 85V N-Channel Enhancement Mode MOSFET Description The AP180N08P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 85V I =180A DS D R

 9.7. Size:1543K  cn apm
 ap180n10mp.pdf

AP180N10MP 100V N-Channel Enhancement Mode MOSFET Description The AP180N10MP uses advanced APM-SGT technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =180A DS D R