AP18P10GJ-HF Todos los transistores

 

AP18P10GJ-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP18P10GJ-HF
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 35.7 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 12 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 14 nS
   Cossⓘ - Capacitancia de salida: 110 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.18 Ohm
   Paquete / Cubierta: TO251
 

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AP18P10GJ-HF Datasheet (PDF)

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 ap18p10gh-hf ap18p10gj-hf.pdf pdf_icon

AP18P10GJ-HF

AP18P10GH/J-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 180m Fast Switching Characteristic ID -12AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,G

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 ap18p10gj.pdf pdf_icon

AP18P10GJ-HF

AP18P10GH/J-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 180m Fast Switching Characteristic ID -12AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, rugge

 6.1. Size:174K  ape
 ap18p10gh.pdf pdf_icon

AP18P10GJ-HF

AP18P10GH/JRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 180m Fast Switching Characteristic ID -12AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,GDruggedized device design, low on-r

 6.2. Size:169K  ape
 ap18p10gm.pdf pdf_icon

AP18P10GJ-HF

AP18P10GM-HFHalogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS -100VDDD Simple Drive Requirement RDS(ON) 180mD Fast Switching Characteristic ID -2.7AGS RoHS Compliant & Halogen-FreeSSSO-8DDescriptionAP18P10 series are

MOSTRAR MÁS

Otros transistores... AP15P10GS-HF , AP15T03GJ , AP15T25H-HF , AP16N50P-HF , AP16N50W-HF , AP1801GU , AP1802GU , AP18P10GH-HF , IRFB31N20D , AP18T10GH , AP18T10GJ , AP1A003GMT-HF , AP6679BGJ-HF , AP6679GH , AP6679GI , AP6679GJ , AP6679GP-A .

History: R5013ANJ | OSG65R580FT3F | 2SK3872-01SJ | SGSP351 | 2SK1015-01 | 80N08TR | RUU002N05

 

 
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