All MOSFET. AP18P10GJ-HF Datasheet

 

AP18P10GJ-HF Datasheet and Replacement


   Type Designator: AP18P10GJ-HF
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 35.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 110 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
   Package: TO251
 

 AP18P10GJ-HF substitution

   - MOSFET ⓘ Cross-Reference Search

 

AP18P10GJ-HF Datasheet (PDF)

 ..1. Size:102K  ape
 ap18p10gh-hf ap18p10gj-hf.pdf pdf_icon

AP18P10GJ-HF

AP18P10GH/J-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 180m Fast Switching Characteristic ID -12AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,G

 5.1. Size:170K  ape
 ap18p10gj.pdf pdf_icon

AP18P10GJ-HF

AP18P10GH/J-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 180m Fast Switching Characteristic ID -12AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, rugge

 6.1. Size:174K  ape
 ap18p10gh.pdf pdf_icon

AP18P10GJ-HF

AP18P10GH/JRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 180m Fast Switching Characteristic ID -12AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,GDruggedized device design, low on-r

 6.2. Size:169K  ape
 ap18p10gm.pdf pdf_icon

AP18P10GJ-HF

AP18P10GM-HFHalogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS -100VDDD Simple Drive Requirement RDS(ON) 180mD Fast Switching Characteristic ID -2.7AGS RoHS Compliant & Halogen-FreeSSSO-8DDescriptionAP18P10 series are

SHOW MORE

Datasheet: AP15P10GS-HF , AP15T03GJ , AP15T25H-HF , AP16N50P-HF , AP16N50W-HF , AP1801GU , AP1802GU , AP18P10GH-HF , IRFB31N20D , AP18T10GH , AP18T10GJ , AP1A003GMT-HF , AP6679BGJ-HF , AP6679GH , AP6679GI , AP6679GJ , AP6679GP-A .

History: BTS140A | UT100N03-Q | HY6N60T | AONV420A70 | FDM606P | NCEP0220F | SQJA04EP

Keywords - AP18P10GJ-HF MOSFET datasheet

 AP18P10GJ-HF cross reference
 AP18P10GJ-HF equivalent finder
 AP18P10GJ-HF lookup
 AP18P10GJ-HF substitution
 AP18P10GJ-HF replacement

 

 
Back to Top

 


 
.