AP18T10GJ Todos los transistores

 

AP18T10GJ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP18T10GJ
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 28 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 9 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 55 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.16 Ohm
   Paquete / Cubierta: TO251
 

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AP18T10GJ Datasheet (PDF)

 ..1. Size:96K  ape
 ap18t10gh ap18t10gj.pdf pdf_icon

AP18T10GJ

AP18T10GH/JRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 100V Lower Gate Charge RDS(ON) 160m Fast Switching Characteristic ID 9AGSDescriptionGDS TO-252(H)Advanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device desig

 6.1. Size:94K  ape
 ap18t10gi.pdf pdf_icon

AP18T10GJ

AP18T10GIRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Fast Switching Performance BVDSS 100VD Single Drive Requirement RDS(ON) 160m Full Isolation Package ID 9AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistanc

 6.2. Size:97K  ape
 ap18t10gh j-hf.pdf pdf_icon

AP18T10GJ

AP18T10GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 100V Lower Gate Charge RDS(ON) 160m Fast Switching Characteristic ID 9AG Halogen Free & RoHS Compliant ProductSDescriptionAdvanced Power MOSFETs from APEC provide theGDS TO-252(H)designer with the best combinatio

 6.3. Size:94K  ape
 ap18t10gp.pdf pdf_icon

AP18T10GJ

AP18T10GPRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 100V Lower Gate Charge RDS(ON) 160m Fast Switching Characteristic ID 9AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistance

MOSTRAR MÁS

Otros transistores... AP15T25H-HF , AP16N50P-HF , AP16N50W-HF , AP1801GU , AP1802GU , AP18P10GH-HF , AP18P10GJ-HF , AP18T10GH , AON6380 , AP1A003GMT-HF , AP6679BGJ-HF , AP6679GH , AP6679GI , AP6679GJ , AP6679GP-A , AP6679GP-HF , AP6679GS .

History: IXFT16N120P | AP9938AGEY | NVMD3P03 | SQ2348ES | TSM9409CS

 

 
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