AP18T10GJ PDF and Equivalents Search

 

AP18T10GJ Specs and Replacement

Type Designator: AP18T10GJ

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 28 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 55 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm

Package: TO251

AP18T10GJ substitution

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AP18T10GJ datasheet

 ..1. Size:96K  ape
 ap18t10gh ap18t10gj.pdf pdf_icon

AP18T10GJ

AP18T10GH/J RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 100V Lower Gate Charge RDS(ON) 160m Fast Switching Characteristic ID 9A G S Description G D S TO-252(H) Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device desig... See More ⇒

 6.1. Size:94K  ape
 ap18t10gi.pdf pdf_icon

AP18T10GJ

AP18T10GI RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Fast Switching Performance BVDSS 100V D Single Drive Requirement RDS(ON) 160m Full Isolation Package ID 9A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistanc... See More ⇒

 6.2. Size:97K  ape
 ap18t10gh j-hf.pdf pdf_icon

AP18T10GJ

AP18T10GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 100V Lower Gate Charge RDS(ON) 160m Fast Switching Characteristic ID 9A G Halogen Free & RoHS Compliant Product S Description Advanced Power MOSFETs from APEC provide the G D S TO-252(H) designer with the best combinatio... See More ⇒

 6.3. Size:94K  ape
 ap18t10gp.pdf pdf_icon

AP18T10GJ

AP18T10GP RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 100V Lower Gate Charge RDS(ON) 160m Fast Switching Characteristic ID 9A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance ... See More ⇒

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Detailed specifications: AP15T25H-HF, AP16N50P-HF, AP16N50W-HF, AP1801GU, AP1802GU, AP18P10GH-HF, AP18P10GJ-HF, AP18T10GH, IRFZ24N, AP1A003GMT-HF, AP6679BGJ-HF, AP6679GH, AP6679GI, AP6679GJ, AP6679GP-A, AP6679GP-HF, AP6679GS

Keywords - AP18T10GJ MOSFET specs

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