AP1A003GMT-HF Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP1A003GMT-HF  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 57 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 15 nS

Cossⓘ - Capacitancia de salida: 1070 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.00099 Ohm

Encapsulados: DFN5X6

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AP1A003GMT-HF datasheet

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AP1A003GMT-HF

AP1A003GMT-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D SO-8 Compatible with Heatsink RDS(ON) 0.99m Low On-resistance ID 260A G RoHS Compliant & Halogen-Free D S D D Description D AP1A003 series are from Advanced Power innovated design and silicon process technology to ach

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AP1A003GMT-HF

AP1A003GMT-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D SO-8 Compatible with Heatsink RDS(ON) 1.2m Low On-resistance ID 235A G RoHS Compliant & Halogen-Free D S D D Description D AP1A003 series are from Advanced Power innovated design and silicon process technology to achi

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AP1A003GMT-HF

AP1A003P Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D 100% Rg & UIS Test D BVDSS 30V Simple Drive Requirement RDS(ON) 2.1m Fast Switching Characteristic ID4 120A G G RoHS Compliant & Halogen-Free S S Description AP4604 seriesare from Advanced Power innovated design AP1A003series arefrom Advanced Power innovated

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