All MOSFET. AP1A003GMT-HF Datasheet

 

AP1A003GMT-HF Datasheet and Replacement


   Type Designator: AP1A003GMT-HF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 57 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 1070 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.00099 Ohm
   Package: DFN5X6
 

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AP1A003GMT-HF Datasheet (PDF)

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AP1A003GMT-HF

AP1A003GMT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VD SO-8 Compatible with Heatsink RDS(ON) 0.99m Low On-resistance ID 260AG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP1A003 series are from Advanced Power innovated design andsilicon process technology to ach

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AP1A003GMT-HF

AP1A003GMT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VD SO-8 Compatible with Heatsink RDS(ON) 1.2m Low On-resistance ID 235AG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP1A003 series are from Advanced Power innovated design andsilicon process technology to achi

 7.1. Size:204K  ape
 ap1a003p.pdf pdf_icon

AP1A003GMT-HF

AP1A003PHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD 100% Rg & UIS Test D BVDSS 30V Simple Drive Requirement RDS(ON) 2.1m Fast Switching Characteristic ID4 120AGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 seriesare from Advanced Power innovated designAP1A003series arefrom Advanced Power innovated

Datasheet: AP16N50P-HF , AP16N50W-HF , AP1801GU , AP1802GU , AP18P10GH-HF , AP18P10GJ-HF , AP18T10GH , AP18T10GJ , IRF830 , AP6679BGJ-HF , AP6679GH , AP6679GI , AP6679GJ , AP6679GP-A , AP6679GP-HF , AP6679GS , AP6679GS-A .

History: 2SK1215F | TPB50R250C

Keywords - AP1A003GMT-HF MOSFET datasheet

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