AP1A003GMT-HF MOSFET Datasheet: N-Ch, 30V, 57A. Full specification with pinout and replacement list

AP1A003GMT-HF Specs and Replacement

Type Designator: AP1A003GMT-HF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 57 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 1070 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.00099 Ohm

Package: DFN5X6

AP1A003GMT-HF substitution

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AP1A003GMT-HF datasheet

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AP1A003GMT-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D SO-8 Compatible with Heatsink RDS(ON) 0.99m Low On-resistance ID 260A G RoHS Compliant & Halogen-Free D S D D Description D AP1A003 series are from Advanced Power innovated design and silicon process technology to ach... See More ⇒

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AP1A003GMT-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D SO-8 Compatible with Heatsink RDS(ON) 1.2m Low On-resistance ID 235A G RoHS Compliant & Halogen-Free D S D D Description D AP1A003 series are from Advanced Power innovated design and silicon process technology to achi... See More ⇒

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AP1A003P Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D 100% Rg & UIS Test D BVDSS 30V Simple Drive Requirement RDS(ON) 2.1m Fast Switching Characteristic ID4 120A G G RoHS Compliant & Halogen-Free S S Description AP4604 seriesare from Advanced Power innovated design AP1A003series arefrom Advanced Power innovated ... See More ⇒

Detailed specifications: AP16N50P-HF, AP16N50W-HF, AP1801GU, AP1802GU, AP18P10GH-HF, AP18P10GJ-HF, AP18T10GH, AP18T10GJ, 2N60, AP6679BGJ-HF, AP6679GH, AP6679GI, AP6679GJ, AP6679GP-A, AP6679GP-HF, AP6679GS, AP6679GS-A