AP6679BGJ-HF Todos los transistores

 

AP6679BGJ-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP6679BGJ-HF
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 54.3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 63 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 44 nC
   trⓘ - Tiempo de subida: 67 nS
   Cossⓘ - Capacitancia de salida: 520 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm
   Paquete / Cubierta: TO251

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AP6679BGJ-HF Datasheet (PDF)

 ..1. Size:98K  ape
ap6679bgh-hf ap6679bgj-hf.pdf

AP6679BGJ-HF
AP6679BGJ-HF

AP6679BGH/J-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID -63AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide theGDdesigner with the best combination of fast switching,

 5.1. Size:134K  ape
ap6679bgjb.pdf

AP6679BGJ-HF
AP6679BGJ-HF

AP6679BGJB-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS -30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID -63AG RoHS Compliant & Halogen-FreeSDescriptionAP6679B series are from Advanced Power innovated design andsilicon process technology to achieve the lowest

 5.2. Size:166K  ape
ap6679bgj.pdf

AP6679BGJ-HF
AP6679BGJ-HF

AP6679BGH/J-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID -63AG RoHS Compliant & Halogen-FreeSDescriptionAP6679B series are from Advanced Power innovated design and siliconGDprocess technology to achieve th

 6.1. Size:95K  ape
ap6679bgm-hf.pdf

AP6679BGJ-HF
AP6679BGJ-HF

AP6679BGM-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VDD Lower On-resistance D RDS(ON) 9mD Fast Switching Characteristic ID -13.5AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination o

 6.2. Size:95K  ape
ap6679bgi-hf.pdf

AP6679BGJ-HF
AP6679BGJ-HF

AP6679BGI-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID -48AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggediz

 6.3. Size:95K  ape
ap6679bgp-hf.pdf

AP6679BGJ-HF
AP6679BGJ-HF

AP6679BGP-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID -63AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,Grugg

 6.4. Size:179K  ape
ap6679bgm.pdf

AP6679BGJ-HF
AP6679BGJ-HF

AP6679BGM-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VDDD Lower On-resistance RDS(ON) 9mD Fast Switching Characteristic ID -13.5AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAP6679B series are from Advanced Power innovated design andsilicon process tech

 6.5. Size:201K  ape
ap6679bgh.pdf

AP6679BGJ-HF
AP6679BGJ-HF

AP6679BGH/J-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID -63AG RoHS Compliant & Halogen-FreeSDescriptionAP6679B series are from Advanced Power innovated design and siliconGDprocess technology to achieve th

 6.6. Size:159K  ape
ap6679bgp.pdf

AP6679BGJ-HF
AP6679BGJ-HF

AP6679BGP-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS -30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID -63AG RoHS Compliant & Halogen-FreeSDescriptionAP6679B series are from Advanced Power innovated design and siliconprocess technology to achieve the lowest

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