AP6679GH MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP6679GH
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 89 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V
|Id|ⓘ - Corriente continua de drenaje: 75 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 35 nS
Cossⓘ - Capacitancia de salida: 960 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm
Encapsulados: TO252
Búsqueda de reemplazo de AP6679GH MOSFET
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AP6679GH datasheet
ap6679gh ap6679gj.pdf
AP6679GH/J RoHS-compliat Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID -75A G S Description G D The TO-252 package is widely preferred for commercial-industrial S TO-252(H) surface mount applications and suited for low voltage appl
ap6679gh.pdf
AP6679GH www.VBsemi.com P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Compliant to RoHS Directive2002/95/EC RDS(on) ( ) VDS (V) ID (A)a Available -60 0.009 at VGS = - 10 V RoHS* - 30 COMPLIANT -58 0.012 at VGS = - 4.5 V S TO-252 G D G S D Top View P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Parameter Symbol Limit Unit VG
ap6679gh-hf ap6679gj-hf.pdf
AP6679GH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID -75A G RoHS Compliant S Description G D The TO-252 package is widely preferred for commercial-industrial S TO-252(H) surface mount applications and suit
ap6679gp-a ap6679gs-a.pdf
AP6679GS/P-A Pb Free Plating Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On-resistance BVDSS -40V Simple Drive Requirement RDS(ON) 13.5m Fast Switching Characteristic ID -65A G RoHS Compliant S Description The Advanced Power MOSFETs from APEC provide the G designer with the best combination of fast switching, D S TO-
Otros transistores... AP1801GU , AP1802GU , AP18P10GH-HF , AP18P10GJ-HF , AP18T10GH , AP18T10GJ , AP1A003GMT-HF , AP6679BGJ-HF , P60NF06 , AP6679GI , AP6679GJ , AP6679GP-A , AP6679GP-HF , AP6679GS , AP6679GS-A , AP6679GS-HF , AP6680AGM-HF .
History: STF12N120K5 | FDBL9406F085 | CJE3134K
History: STF12N120K5 | FDBL9406F085 | CJE3134K
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