AP6679GH
Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: AP6679GH
Тип транзистора: MOSFET
Полярность: P
Pdⓘ - Максимальная рассеиваемая мощность: 89
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 25
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 75
A
Tjⓘ - Максимальная температура канала: 150
°C
trⓘ -
Время нарастания: 35
ns
Cossⓘ - Выходная емкость: 960
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.009
Ohm
Тип корпуса:
TO252
- подбор MOSFET транзистора по параметрам
AP6679GH
Datasheet (PDF)
..1. Size:215K ape
ap6679gh ap6679gj.pdf 

AP6679GH/JRoHS-compliat ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID -75AGSDescriptionGDThe TO-252 package is widely preferred for commercial-industrial STO-252(H)surface mount applications and suited for low voltage appl
..2. Size:411K cn vbsemi
ap6679gh.pdf 

AP6679GHwww.VBsemi.comP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Compliant to RoHS Directive2002/95/ECRDS(on) ()VDS (V) ID (A)aAvailable-600.009 at VGS = - 10 VRoHS*- 30COMPLIANT-580.012 at VGS = - 4.5 VSTO-252GDG SDTop ViewP-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Limit UnitVG
0.1. Size:216K ape
ap6679gh-hf ap6679gj-hf.pdf 

AP6679GH/J-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID -75AG RoHS CompliantSDescriptionGDThe TO-252 package is widely preferred for commercial-industrialSTO-252(H)surface mount applications and suit
7.1. Size:60K ape
ap6679gp-a ap6679gs-a.pdf 

AP6679GS/P-APb Free Plating ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower On-resistance BVDSS -40V Simple Drive Requirement RDS(ON) 13.5m Fast Switching Characteristic ID -65AG RoHS CompliantSDescriptionThe Advanced Power MOSFETs from APEC provide theGdesigner with the best combination of fast switching,DS TO-
7.2. Size:198K ape
ap6679gs.pdf 

AP6679GS/PRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID -75AGSDescriptionAdvanced Power MOSFETs from APEC provide theGdesigner with the best combination of fast switching,DS TO-263(S)ruggedized device desi
7.3. Size:153K ape
ap6679gi-hf.pdf 

AP6679GI-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low Gate Charge BVDSS -30V Single Drive Requirement RDS(ON) 9m Lower On-resistance ID -48AG RoHS CompliantSDescriptionAdvanced Power MOSFETs from APEC provide theGdesigner with the best combination of fast switching,DS TO-220CFM(I)ruggedized dev
7.4. Size:201K ape
ap6679gp.pdf 

AP6679GS/PRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID -75AGSDescriptionAdvanced Power MOSFETs from APEC provide theGdesigner with the best combination of fast switching,DS TO-263(S)ruggedized device desi
7.5. Size:125K ape
ap6679gm-hf.pdf 

AP6679GM-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VDD Low On-resistance D RDS(ON) 9mD Fast Switching Characteristic ID -14AG RoHS Compliant SSSO-8SDescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ru
7.6. Size:150K ape
ap6679gi.pdf 

AP6679GIRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low Gate Charge BVDSS -30V Single Drive Requirement RDS(ON) 9m Lower On-resistance ID -48AGSDescriptionAdvanced Power MOSFETs from APEC provide theGdesigner with the best combination of fast switching,DTO-220CFM(I)Sruggedized device design, low on-r
7.7. Size:97K ape
ap6679gp-hf ap6679gs-hf.pdf 

AP6679GS/P-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID -75AG RoHS CompliantSDescriptionAdvanced Power MOSFETs from APEC provide theGdesigner with the best combination of fast switching,DS TO-263(S)r
7.8. Size:62K ape
ap6679gs p-a-hf.pdf 

AP6679GS/P-A-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower On-resistance BVDSS -40V Simple Drive Requirement RDS(ON) 13.5m Fast Switching Characteristic ID -65AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,
7.9. Size:149K ape
ap6679gr.pdf 

AP6679GRRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID -75AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistance
Другие MOSFET... FMM50-025TF
, FMM60-02TF
, FMM75-01F
, FMP26-02P
, FMP36-015P
, FMP76-01T
, GMM3x100-01X1-SMD
, FDMS0306AS
, 5N60
, FDMS0300S
, GMM3x160-0055X2-SMD
, FDMC7200S
, GMM3x180-004X2-SMD
, FDMC7200
, GMM3x60-015X2-SMD
, FDMC0310AS
, GWM100-0085X1-SL
.
History: IXFC80N10
| FDW254P