AP6680GM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP6680GM
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
|Id|ⓘ - Corriente continua de drenaje: 11.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 7.3 nS
Cossⓘ - Capacitancia de salida: 285 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.011 Ohm
Paquete / Cubierta: SO8
Búsqueda de reemplazo de AP6680GM MOSFET
AP6680GM Datasheet (PDF)
ap6680gm.pdf

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ap6680cgyt-hf.pdf

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Otros transistores... AP6679GI , AP6679GJ , AP6679GP-A , AP6679GP-HF , AP6679GS , AP6679GS-A , AP6679GS-HF , AP6680AGM-HF , P0903BDG , AP6681GMT-HF , AP20N15AGI-HF , AP20P02GH , AP20P02GJ , AP20T15GM-HF , AP2301AGN , AP2301EN-HF , AP2301GN .
History: WMP07N80M3 | AP2325GEN | RFL1N18 | SIF8N50C | SFW9634 | SML1310IG
History: WMP07N80M3 | AP2325GEN | RFL1N18 | SIF8N50C | SFW9634 | SML1310IG



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