Справочник MOSFET. AP6680GM

 

AP6680GM MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AP6680GM
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 2.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 25 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 11.5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 7.3 ns
   Cossⓘ - Выходная емкость: 285 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.011 Ohm
   Тип корпуса: SO8

 Аналог (замена) для AP6680GM

 

 

AP6680GM Datasheet (PDF)

 ..1. Size:81K  ape
 ap6680gm.pdf

AP6680GM AP6680GM

AP6680GMPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETLowOn-Resistance BVDSS 30V Low On-ResistanceLowOn-Resistance Low On-ResistanceDDHighVgsMaxRatingVoltage D RDS(ON) 11m High Vgs Max Rating VoltageHighVgsMaxRatingVoltage High Vgs Max Rating VoltageDSurfaceMountPackage ID 11.5A Surfa

 8.1. Size:93K  ape
 ap6680bgm-hf.pdf

AP6680GM AP6680GM

AP6680BGM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS 30VDDD Simple Drive Requirement RDS(ON) 9mD Fast Switching Characteristic ID 13.3AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of f

 8.2. Size:196K  ape
 ap6680agm.pdf

AP6680GM AP6680GM

AP6680AGMRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-Resistance D BVDSS 30V Simple Drive Requirement RDS(ON) 11m Fast Switching Characteristic ID 12AGSDDDescriptionDAdvanced Power MOSFETs from APEC provide the Ddesigner with the best combination of fast switching,Gruggedized device design, ultra

 8.3. Size:59K  ape
 ap6680cgyt-hf.pdf

AP6680GM AP6680GM

AP6680CGYT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VD Small Size & Lower Profile RDS(ON) 9m RoHS Compliant & Halogen-Free ID 15AGSDDDescriptionDAP6680C series are from Advanced Power innovated design and siliconDprocess technology to achieve the lowest possible on-re

 8.4. Size:60K  ape
 ap6680sgyt-hf.pdf

AP6680GM AP6680GM

AP6680SGYT-HFHalogen-Free ProductAdvanced Power N-CHANNEL MOSFET WITH SCHOTTKYElectronics Corp. DIODED Simple Drive Requirement BVDSS 30V Small Size & Lower Profile RDS(ON) 9mSchottky Diode RoHS Compliant & Halogen-Free ID 15AGSDDDescriptionDAP6680S series are from Advanced Power innovated design and siliconDprocess technology to achieve the lowest p

 8.5. Size:96K  ape
 ap6680bgyt-hf.pdf

AP6680GM AP6680GM

AP6680BGYT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VD Small Size & Lower Profile RDS(ON) 9m RoHS Compliant & Halogen-Free ID 16AGSDDDescriptionDAdvanced Power MOSFETs from APEC provide theDdesigner with the best combination of fast switching,ruggedized device desi

 8.6. Size:94K  ape
 ap6680agm-hf.pdf

AP6680GM AP6680GM

AP6680AGM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-Resistance D BVDSS 30V Simple Drive Requirement RDS(ON) 11m Fast Switching Characteristic ID 12AG RoHS Compliant & Halogen-FreeSDDDescriptionDAdvanced Power MOSFETs from APEC provide the Ddesigner with the best combination of fast switching,

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