AP2301AGN Todos los transistores

 

AP2301AGN MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP2301AGN

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.38 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V

|Id|ⓘ - Corriente continua de drenaje: 3.3 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 17 nS

Cossⓘ - Capacitancia de salida: 90 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.097 Ohm

Encapsulados: SOT23

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AP2301AGN datasheet

 ..1. Size:93K  ape
 ap2301agn.pdf pdf_icon

AP2301AGN

AP2301AGN RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -20V Small Package Outline RDS(ON) 97m D Surface Mount Device ID - 3.3A S SOT-23 G Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G low on-resistance and cost-effec

 0.1. Size:56K  ape
 ap2301agn-hf.pdf pdf_icon

AP2301AGN

AP2301AGN-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -20V D Small Package Outline RDS(ON) 97m Surface Mount Device ID - 3.3A S RoHS Compliant & Halogen-Free SOT-23 G D Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,l

 7.1. Size:1798K  cn apm
 ap2301ai.pdf pdf_icon

AP2301AGN

AP2301AI -20V P-Channel Enhancement Mode MOSFET Description The AP2301AI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -20V I =-3.3A DS D R

 8.1. Size:93K  ape
 ap2301gn.pdf pdf_icon

AP2301AGN

AP2301GN RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -20V Small Package Outline RDS(ON) 130m D Surface Mount Device ID - 2.6A S SOT-23 G Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G low on-resistance and cost-effec

MOSTRAR MÁS

Otros transistores... AP6679GS-HF , AP6680AGM-HF , AP6680GM , AP6681GMT-HF , AP20N15AGI-HF , AP20P02GH , AP20P02GJ , AP20T15GM-HF , EMB04N03H , AP2301EN-HF , AP2301GN , AP2302GN , AP2302N-HF , AP2303GN , AP2305AGN , AP2306GN , AP2309GN .

 

 

 

 

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