AP2302N-HF Todos los transistores

 

AP2302N-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP2302N-HF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 3.2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 12 nS

Cossⓘ - Capacitancia de salida: 105 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.064 Ohm

Encapsulados: SOT23S

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AP2302N-HF datasheet

 ..1. Size:91K  ape
ap2302n-hf.pdf pdf_icon

AP2302N-HF

AP2302N-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS 20V D Lower Gate Charge RDS(ON) 64m Surface Mount Package ID 3.2A S RoHS Compliant & Halogen-Free SOT-23S G D Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resista

 8.1. Size:96K  ape
ap2302gn-hf.pdf pdf_icon

AP2302N-HF

AP2302GN-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 2.5V gate drive BVDSS 20V Small package outline D RDS(ON) 85m Surface mount package ID 3.2A RoHS Compliant S SOT-23 G Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, D low on-resistanc

 8.2. Size:176K  ape
ap2302agn.pdf pdf_icon

AP2302N-HF

AP2302AGN-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS 20V D Lower Gate Charge RDS(ON) 42m Surface Mount Package ID 4.6A S RoHS Compliant & Halogen-Free SOT-23 G D Description AP2302A series are from Advanced Power innovated design and silicon process technology to achieve the l

 8.3. Size:95K  ape
ap2302gn.pdf pdf_icon

AP2302N-HF

AP2302GN RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 2.5V gate drive BVDSS 20V Small package outline D RDS(ON) 85m Surface mount package ID 3.2A S SOT-23 G Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, D low on-resistance and cost-effectiven

Otros transistores... AP20N15AGI-HF , AP20P02GH , AP20P02GJ , AP20T15GM-HF , AP2301AGN , AP2301EN-HF , AP2301GN , AP2302GN , AO4407A , AP2303GN , AP2305AGN , AP2306GN , AP2309GN , AP2310GN , AP2313GN , AP2320GN-HF , AP2320N-HF .

 

 

 

 

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