AP2302N-HF
MOSFET. Datasheet pdf. Equivalent
Type Designator: AP2302N-HF
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 1
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2
V
|Id|ⓘ - Maximum Drain Current: 3.2
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 6.5
nC
trⓘ - Rise Time: 12
nS
Cossⓘ -
Output Capacitance: 105
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.064
Ohm
Package:
SOT23S
AP2302N-HF
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AP2302N-HF
Datasheet (PDF)
..1. Size:91K ape
ap2302n-hf.pdf
AP2302N-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS 20VD Lower Gate Charge RDS(ON) 64m Surface Mount Package ID 3.2AS RoHS Compliant & Halogen-FreeSOT-23SGDDescriptionAdvanced Power MOSFETs utilized advanced processing techniques toachieve the lowest possible on-resista
8.1. Size:96K ape
ap2302gn-hf.pdf
AP2302GN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V gate drive BVDSS 20V Small package outline D RDS(ON) 85m Surface mount package ID 3.2A RoHS CompliantSSOT-23GDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,Dlow on-resistanc
8.2. Size:176K ape
ap2302agn.pdf
AP2302AGN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS 20VD Lower Gate Charge RDS(ON) 42m Surface Mount Package ID 4.6AS RoHS Compliant & Halogen-FreeSOT-23GDDescriptionAP2302A series are from Advanced Power innovated design andsilicon process technology to achieve the l
8.3. Size:95K ape
ap2302gn.pdf
AP2302GNRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V gate drive BVDSS 20V Small package outline D RDS(ON) 85m Surface mount package ID 3.2ASSOT-23GDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,Dlow on-resistance and cost-effectiven
8.4. Size:94K ape
ap2302agn-hf.pdf
AP2302AGN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V gate drive BVDSS 20VD Lower Gate Charge RDS(ON) 42m Surface mount package ID 4.6AS RoHS Compliant & Halogen-FreeSOT-23GDDescriptionAdvanced Power MOSFETs utilized advanced processing techniques toachieve the lowest possible on-resist
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