AP2306GN Todos los transistores

 

AP2306GN MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP2306GN
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.38 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 5.3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 14 nS
   Cossⓘ - Capacitancia de salida: 144 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.03 Ohm
   Paquete / Cubierta: SOT23
 

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AP2306GN Datasheet (PDF)

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AP2306GN

AP2306GN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V gate drive BVDSS 20V Lower on-resistance RDS(ON) 35mD Surface mount package ID 5.3A RoHS CompliantSDSOT-23GDescriptionAdvanced Power MOSFETs utilized advanced processing techniquesGto achieve the lowest possible on-resistance, extre

 8.1. Size:93K  ape
ap2306cgn-hf.pdf pdf_icon

AP2306GN

AP2306CGN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V gate drive BVDSS 20V Lower on-resistance RDS(ON) 30mD Surface mount package ID 5.5A RoHS CompliantSDSOT-23GDescriptionAdvanced Power MOSFETs utilized advanced processing techniques toGachieve the lowest possible on-resistance, extr

 8.2. Size:95K  ape
ap2306agen-hf.pdf pdf_icon

AP2306GN

AP2306AGEN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS 30VD Small Outline Package RDS(ON) 50m Surface Mount Device ID 4.1AS RoHS Compliant & Halogen-FreeSOT-23 GDescriptionAdvanced Power MOSFETs utilized advanced processing techniques toDachieve the lowest possible on-res

 8.3. Size:179K  ape
ap2306agen.pdf pdf_icon

AP2306GN

AP2306AGEN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS 30VD Small Outline Package RDS(ON) 50m Surface Mount Device ID 4.1AS RoHS Compliant & Halogen-FreeSOT-23 GDescriptionAdvanced Power MOSFETs utilized advanced processing techniques toDachieve the lowest possible on-res

Otros transistores... AP20T15GM-HF , AP2301AGN , AP2301EN-HF , AP2301GN , AP2302GN , AP2302N-HF , AP2303GN , AP2305AGN , IRFP064N , AP2309GN , AP2310GN , AP2313GN , AP2320GN-HF , AP2320N-HF , AP2322GN-HF , AP2325GEU6-HF , AP2333EN-HF .

History: BLM03N03-D | 2SK3686-01 | STP6506 | 12N65H | TN2404K | STT468A | STW37N60DM2AG

 

 
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