AP2306GN MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP2306GN
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.38 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 5.3 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 14 nS
Cossⓘ - Capacitancia de salida: 144 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.03 Ohm
Encapsulados: SOT23
Búsqueda de reemplazo de AP2306GN MOSFET
- Selecciónⓘ de transistores por parámetros
AP2306GN datasheet
ap2306gn-hf.pdf
AP2306GN-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 2.5V gate drive BVDSS 20V Lower on-resistance RDS(ON) 35m D Surface mount package ID 5.3A RoHS Compliant S D SOT-23 G Description Advanced Power MOSFETs utilized advanced processing techniques G to achieve the lowest possible on-resistance, extre
ap2306cgn-hf.pdf
AP2306CGN-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 2.5V gate drive BVDSS 20V Lower on-resistance RDS(ON) 30m D Surface mount package ID 5.5A RoHS Compliant S D SOT-23 G Description Advanced Power MOSFETs utilized advanced processing techniques to G achieve the lowest possible on-resistance, extr
ap2306agen-hf.pdf
AP2306AGEN-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS 30V D Small Outline Package RDS(ON) 50m Surface Mount Device ID 4.1A S RoHS Compliant & Halogen-Free SOT-23 G Description Advanced Power MOSFETs utilized advanced processing techniques to D achieve the lowest possible on-res
ap2306agen.pdf
AP2306AGEN-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS 30V D Small Outline Package RDS(ON) 50m Surface Mount Device ID 4.1A S RoHS Compliant & Halogen-Free SOT-23 G Description Advanced Power MOSFETs utilized advanced processing techniques to D achieve the lowest possible on-res
Otros transistores... AP20T15GM-HF , AP2301AGN , AP2301EN-HF , AP2301GN , AP2302GN , AP2302N-HF , AP2303GN , AP2305AGN , AO4468 , AP2309GN , AP2310GN , AP2313GN , AP2320GN-HF , AP2320N-HF , AP2322GN-HF , AP2325GEU6-HF , AP2333EN-HF .
History: AP15TP1R0M | AP13P15GS | AP9962AGM | JCS18N50WH | STF13NM60ND | IPP086N10N3 | MME65R280QRH
History: AP15TP1R0M | AP13P15GS | AP9962AGM | JCS18N50WH | STF13NM60ND | IPP086N10N3 | MME65R280QRH
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