AP2310GN Todos los transistores

 

AP2310GN MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP2310GN

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.38 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 3 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 5 nS

Cossⓘ - Capacitancia de salida: 55 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.09 Ohm

Encapsulados: SOT23

 Búsqueda de reemplazo de AP2310GN MOSFET

- Selecciónⓘ de transistores por parámetros

 

AP2310GN datasheet

 ..1. Size:68K  ape
ap2310gn.pdf pdf_icon

AP2310GN

AP2310GN Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60V Small Package Outline RDS(ON) 90m D Surface Mount Device ID 3A S SOT-23 G Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible o

 0.1. Size:94K  ape
ap2310gn-hf.pdf pdf_icon

AP2310GN

AP2310GN-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60V D Small Package Outline RDS(ON) 90m Surface Mount Device ID 3A S RoHS Compliant SOT-23 G D Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely e

 7.1. Size:56K  ape
ap2310gg-hf.pdf pdf_icon

AP2310GN

AP2310GG-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS 60V D Fast Switching Characteristic RDS(ON) 90m Simple Drive Requirement ID 2.7A G RoHS Compliant & Halogen-Free S D Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, S rug

 7.2. Size:49K  ape
ap2310gk-hf.pdf pdf_icon

AP2310GN

AP2310GK-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60V D Lower Gate Charge RDS(ON) 90m S Fast Switching Characteristic ID 4.1A D RoHS Compliant & Halogen-Free SOT-223 G Description D Advanced Power MOSFETs from APEC

Otros transistores... AP2301EN-HF , AP2301GN , AP2302GN , AP2302N-HF , AP2303GN , AP2305AGN , AP2306GN , AP2309GN , IRFZ44N , AP2313GN , AP2320GN-HF , AP2320N-HF , AP2322GN-HF , AP2325GEU6-HF , AP2333EN-HF , AP2336GN-HF , AP2340GN-HF .

History: SGSP462 | AP3N4R5M | AP15N03GH

 

 

 

 

↑ Back to Top
.