AP2310GN MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AP2310GN
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.38 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 6 nC
   trⓘ - Tiempo de subida: 5 nS
   Cossⓘ - Capacitancia de salida: 55 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.09 Ohm
   Paquete / Cubierta: SOT23

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AP2310GN Datasheet (PDF)

..1. Size:68K ape
ap2310gn.pdf

AP2310GNPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETSimple Drive Requirement BVDSS 60V Small Package Outline RDS(ON) 90m DSurface Mount Device ID 3A SSOT-23GDescriptionAdvanced Power MOSFETs utilized advanced processing techniques toachieve the lowest possible o

0.1. Size:94K ape
ap2310gn-hf.pdf

AP2310GN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60VD Small Package Outline RDS(ON) 90m Surface Mount Device ID 3AS RoHS CompliantSOT-23GDDescriptionAdvanced Power MOSFETs utilized advanced processing techniques toachieve the lowest possible on-resistance, extremely e

7.1. Size:56K ape
ap2310gg-hf.pdf

AP2310GG-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS 60VD Fast Switching Characteristic RDS(ON) 90m Simple Drive Requirement ID 2.7AG RoHS Compliant & Halogen-FreeSDDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,Srug

7.2. Size:49K ape
ap2310gk-hf.pdf

AP2310GK-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60VD Lower Gate Charge RDS(ON) 90mS Fast Switching Characteristic ID 4.1AD RoHS Compliant & Halogen-FreeSOT-223GDescriptionDAdvanced Power MOSFETs from APEC

7.3. Size:1490K cn vbsemi
ap2310gg.pdf

AP2310GGwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.076 at VGS = 4.5 V 7.1RoHS29 nC COMPLIANT60APPLICATIONS0.088 at VGS = 10 V 6.7 Load Switches for Portable DevicesDDGSG D SN-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise n

Otros transistores... AP2301EN-HF , AP2301GN , AP2302GN , AP2302N-HF , AP2303GN , AP2305AGN , AP2306GN , AP2309GN , IRFZ44N , AP2313GN , AP2320GN-HF , AP2320N-HF , AP2322GN-HF , AP2325GEU6-HF , AP2333EN-HF , AP2336GN-HF , AP2340GN-HF .

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