AP2320GN-HF Todos los transistores

 

AP2320GN-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP2320GN-HF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.7 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 0.25 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 7 nS

Cossⓘ - Capacitancia de salida: 9.5 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 5 Ohm

Encapsulados: SOT23

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AP2320GN-HF datasheet

 ..1. Size:54K  ape
 ap2320gn-hf.pdf pdf_icon

AP2320GN-HF

AP2320GN-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100V D Small Package Outline RDS(ON) 5 Surface Mount Device ID 0.25A S RoHS Compliant & Halogen-Free SOT-23 G D Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resist

 6.1. Size:146K  ape
 ap2320gn.pdf pdf_icon

AP2320GN-HF

AP2320GN Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100V D Small Package Outline RDS(ON) 5 Surface Mount Device ID 0.25A S RoHS Compliant & Halogen-Free SOT-23S G D Description AP2320 series are from Advanced Power innovated design and silicon process technology to achieve the lowe

 8.1. Size:55K  ape
 ap2320n-hf.pdf pdf_icon

AP2320GN-HF

AP2320N-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100V D Small Package Outline RDS(ON) 5 Surface Mount Device ID 0.25A S RoHS Compliant & Halogen-Free SOT-23S G D Description AP2320 series are from Advanced Power innovated design and silicon process technology to achieve the lo

 8.2. Size:1420K  cn apm
 ap2320mi.pdf pdf_icon

AP2320GN-HF

AP2320MI 20V N-Channel Enhancement Mode MOSFET Description The AP2320MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I =8A DS D R

MOSTRAR MÁS

Otros transistores... AP2302GN , AP2302N-HF , AP2303GN , AP2305AGN , AP2306GN , AP2309GN , AP2310GN , AP2313GN , IRF740 , AP2320N-HF , AP2322GN-HF , AP2325GEU6-HF , AP2333EN-HF , AP2336GN-HF , AP2340GN-HF , AP2346GN-HF , AP2451GY .

History: ME04N25G | IRFS254B | IPP052NE7N3 | WMP80R1K0S | IXFK60N55Q2 | SiS412DN | WMM80R1K0S

 

 

 

 

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