AP2320N-HF Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP2320N-HF 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.7 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 0.25 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 7 nS
Cossⓘ - Capacitancia de salida: 9.5 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 5 Ohm
Encapsulados: SOT23S
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Búsqueda de reemplazo de AP2320N-HF MOSFET
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AP2320N-HF datasheet
ap2320n-hf.pdf
AP2320N-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100V D Small Package Outline RDS(ON) 5 Surface Mount Device ID 0.25A S RoHS Compliant & Halogen-Free SOT-23S G D Description AP2320 series are from Advanced Power innovated design and silicon process technology to achieve the lo
ap2320gn.pdf
AP2320GN Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100V D Small Package Outline RDS(ON) 5 Surface Mount Device ID 0.25A S RoHS Compliant & Halogen-Free SOT-23S G D Description AP2320 series are from Advanced Power innovated design and silicon process technology to achieve the lowe
ap2320gn-hf.pdf
AP2320GN-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100V D Small Package Outline RDS(ON) 5 Surface Mount Device ID 0.25A S RoHS Compliant & Halogen-Free SOT-23 G D Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resist
ap2320mi.pdf
AP2320MI 20V N-Channel Enhancement Mode MOSFET Description The AP2320MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I =8A DS D R
Otros transistores... AP2302N-HF, AP2303GN, AP2305AGN, AP2306GN, AP2309GN, AP2310GN, AP2313GN, AP2320GN-HF, IRF740, AP2322GN-HF, AP2325GEU6-HF, AP2333EN-HF, AP2336GN-HF, AP2340GN-HF, AP2346GN-HF, AP2451GY, AP2531GY-HF
Parámetros del MOSFET. Cómo se afectan entre sí.
History: SI7946ADP | UTT60P03
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