AP2623GY-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP2623GY-HF
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.2 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 2 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 6 nS
Cossⓘ - Capacitancia de salida: 42 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.17 Ohm
Paquete / Cubierta: SOT26
- Selección de transistores por parámetros
AP2623GY-HF Datasheet (PDF)
ap2623gy-hf.pdf

AP2623GY-HFHalogen-Free ProductAdvanced Power DUAL P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFETD2 Low Gate Charge BVDSS -30VS1D1 Low On-resistance RDS(ON) 170mG2 Surface Mount Package ID - 2AS2 RoHS Compliant & Halogen-Free SOT-26G1DescriptionD2D1Advanced Power MOSFETs utilized advanced processingtechniques to achieve the lowest poss
ap2623gy.pdf

AP2623GYRoHS-compliant ProductAdvanced Power DUAL P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Low Gate Charge BVDSS -30VD2D1 Low On-resistance RDS(ON) 170m Surface Mount Package ID - 2AG2G1S2S1DescriptionD2Advanced Power MOSFETs utilized advanced processing techniquesS1to achieve the lowest possible on-resistance, extremely efficient and
ap2625gy-hf.pdf

AP2625GY-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD2 Low Gate Charge BVDSS -30VS1D1 Capable of 2.5V Gate Drive RDS(ON) 185mG2 Surface Mount Package ID - 2AS2SOT-26 RoHS Compliant & Halogen-Free G1DescriptionD2D1Advanced Power MOSFETs utilized advanced processingtechniques to achieve the lowest
ap2622gy-hf.pdf

AP2622GY-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD1 Low Gate Charge D2 BVDSS 50V Small Package Outline RDS(ON) 1.8G1 G2 Surface Mount Package ID 520mA RoHS CompliantS2S1DescriptionD2Advanced Power MOSFETs utilized advanced processing techniques toS1achieve the lowest possible on-resistance, extre
Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
History: IMW65R027M1H
History: IMW65R027M1H



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