AP3801GM-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP3801GM-HF
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.5 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 8 nS
Cossⓘ - Capacitancia de salida: 75 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.07 Ohm
Encapsulados: SO8
Búsqueda de reemplazo de AP3801GM-HF MOSFET
- Selecciónⓘ de transistores por parámetros
AP3801GM-HF datasheet
ap3801gm-hf.pdf
AP3801GM-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D D D Low Gate Charge RDS(ON) 70m D Fast Switching Characteristic ID -5A G S RoHS Compliant & Halogen-Free S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast
ap3801gm.pdf
AP3801GM Pb Free Plating Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D D Low On-resistance D RDS(ON) 70m D Fast Switching Characteristic ID -5A G RoHS Compliant S S SO-8 S Description D The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,
ap38028em.pdf
AP38028EM Halogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET D2 Simple Drive Requirement BVDSS 30V D2 D1 Low On-resistance RDS(ON) 28m D1 Fast Switching Performance ID 6.6A G2 S2 RoHS Compliant & Halogen-Free G1 S1 SO-8 Description AP38028E series are from Advanced Power innovated design D1 D2 and silicon pro
ap3800yt.pdf
AP3800YT Halogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET D1 Simple Drive Requirement CH-1 BVDSS 30V Easy for Synchronous Buck RDS(ON) 10.8m G1 Converter Application ID3 10.3A D2/S1 RoHS Compliant & Halogen-Free CH-2 BVDSS 30V RDS(ON) 8.5m G2 Description ID3 12.7A S2 Advanced Power MOSFETs from APEC provide the de
Otros transistores... AP2762I-A , AP2764AP-A , AP2764I-A-HF , AP2R803GH , AP2R803GM-HF , AP2R803GS-HF , AP30P10GS-HF , AP3310GJ , AON7408 , AP3989I-HF , AP3R604GH , AP4002H-HF , AP4002J-HF , AP4002T , AP4036AGM-HF , AP40N03GH-HF , AP40N03GJ-HF .
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Recientemente añadidas las descripciónes de los transistores:
MOSFET: AUB062N08BG | AUB060N08AG | AUB056N10 | AUB056N08BGL | AUB050N085 | AUB050N055 | AUB045N12 | AUB045N10BT | AUB039N10 | AUB034N10 | AUB033N08BG | AUB026N085 | AUA062N08BG | AUA060N08AG | AUA056N08BGL | AUA039N10
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