All MOSFET. AP3801GM-HF Datasheet

 

AP3801GM-HF MOSFET. Datasheet pdf. Equivalent


   Type Designator: AP3801GM-HF
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 6.5 nC
   trⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 75 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
   Package: SO8

 AP3801GM-HF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AP3801GM-HF Datasheet (PDF)

 ..1. Size:92K  ape
 ap3801gm-hf.pdf

AP3801GM-HF AP3801GM-HF

AP3801GM-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VDDD Low Gate Charge RDS(ON) 70mD Fast Switching Characteristic ID -5AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast

 6.1. Size:59K  ape
 ap3801gm.pdf

AP3801GM-HF AP3801GM-HF

AP3801GMPb Free Plating ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VDD Low On-resistance D RDS(ON) 70mD Fast Switching Characteristic ID -5AG RoHS Compliant SSSO-8SDescriptionDThe Advanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,

 9.1. Size:181K  ape
 ap38028em.pdf

AP3801GM-HF AP3801GM-HF

AP38028EMHalogen-Free ProductAdvanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFETD2 Simple Drive Requirement BVDSS 30VD2D1 Low On-resistance RDS(ON) 28mD1 Fast Switching Performance ID 6.6AG2S2 RoHS Compliant & Halogen-FreeG1S1SO-8DescriptionAP38028E series are from Advanced Power innovated designD1 D2and silicon pro

 9.2. Size:212K  ape
 ap3800yt.pdf

AP3801GM-HF AP3801GM-HF

AP3800YTHalogen-Free ProductAdvanced Power DUAL N-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFETD1 Simple Drive Requirement CH-1 BVDSS 30V Easy for Synchronous Buck RDS(ON) 10.8mG1Converter Application ID3 10.3AD2/S1 RoHS Compliant & Halogen-Free CH-2 BVDSS 30VRDS(ON) 8.5mG2Description ID3 12.7AS2Advanced Power MOSFETs from APEC providethe de

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: FQP4N60

 

 
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