IRFI9530G
MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFI9530G
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 42
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 100
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20
V
|Id|ⓘ - Corriente continua de drenaje: 7.7
A
Tjⓘ - Temperatura máxima de unión: 175
°C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 52
nS
Cossⓘ - Capacitancia
de salida: 340
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.3
Ohm
Paquete / Cubierta:
TO220F
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IRFI9530G
Datasheet (PDF)
..1. Size:2151K international rectifier
irfi9530gpbf.pdf 
PD - 94932IRFI9530GPbF Lead-Free1/8/04Document Number: 91163 www.vishay.com1IRFI9530GPbFDocument Number: 91163 www.vishay.com2IRFI9530GPbFDocument Number: 91163 www.vishay.com3IRFI9530GPbFDocument Number: 91163 www.vishay.com4IRFI9530GPbFDocument Number: 91163 www.vishay.com5IRFI9530GPbFDocument Number: 91163 www.vishay.com6IRFI9530GPbFTO-220
..3. Size:1458K vishay
irfi9530g sihfi9530g.pdf
IRFI9530G, SiHFI9530GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) - 100 High Voltage Isolation = 2.5 kVRMS (t = 60 s;Availablef = 60 Hz)RDS(on) ()VGS = - 10 V 0.30RoHS* Sink to Lead Creepage Distance = 4.8 mmQg (Max.) (nC) 38 COMPLIANT P-ChannelQgs (nC) 6.8 175 C Operating TemperatureQgd (nC) 21 Dynamic dV/
..4. Size:1460K vishay
irfi9530gpbf sihfi9530g.pdf
IRFI9530G, SiHFI9530GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) - 100 High Voltage Isolation = 2.5 kVRMS (t = 60 s;Availablef = 60 Hz)RDS(on) ()VGS = - 10 V 0.30RoHS* Sink to Lead Creepage Distance = 4.8 mmQg (Max.) (nC) 38 COMPLIANT P-ChannelQgs (nC) 6.8 175 C Operating TemperatureQgd (nC) 21 Dynamic dV/
..5. Size:1462K cn vbsemi
irfi9530g.pdf
IRFI9530Gwww.VBsemi.twP-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A) Qg (Typ.)Definition0.220 at VGS = - 10 V - 12 TrenchFET Power MOSFET- 100 11.70.230 at VGS = - 4.5 V - 10 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Power Switch DC/DC Co
8.1. Size:145K international rectifier
irfi9540n.pdf
PD - 9.1487BIRFI9540NPRELIMINARYHEXFET Power MOSFET Advanced Process TechnologyD Isolated PackageVDSS = -100V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mmRDS(on) = 0.117 P-ChannelG Fully Avalanche RatedID = -15ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveext
8.3. Size:284K international rectifier
irfi9540g.pdf
PD - 95609IRFI9540GPbF Lead-Free7/29/03Document Number: 91164 www.vishay.com1IRFI9540GPbFDocument Number: 91164 www.vishay.com2IRFI9540GPbFDocument Number: 91164 www.vishay.com3IRFI9540GPbFDocument Number: 91164 www.vishay.com4IRFI9540GPbFDocument Number: 91164 www.vishay.com5IRFI9540GPbFDocument Number: 91164 www.vishay.com6IRFI9540GPbFPeak
8.4. Size:1009K international rectifier
irfi9520gpbf.pdf
PD- 95391IRFI9520GPbF Lead-Free06/10/04Document Number: 91162 www.vishay.com1IRFI9520GPbFDocument Number: 91162 www.vishay.com2IRFI9520GPbFDocument Number: 91162 www.vishay.com3IRFI9520GPbFDocument Number: 91162 www.vishay.com4IRFI9520GPbFDocument Number: 91162 www.vishay.com5IRFI9520GPbFDocument Number: 91162 www.vishay.com6IRFI9520GPbFDocum
8.5. Size:103K international rectifier
irfi9520n.pdf
PD - 9.1527IRFI9520NPRELIMINARYHEXFET Power MOSFET Advanced Process TechnologyD Isolated PackageVDSS = -100V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mmRDS(on) = 0.48 P-ChannelG Fully Avalanche RatedID = -5.5ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextr
8.6. Size:1446K vishay
irfi9520g sihfi9520g.pdf
IRFI9520G, SiHFI9520GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) - 100 High Voltage Isolation = 2.5 kVRMS (t = 60 s;AvailableRDS(on) ()VGS = - 10 V 0.60f = 60 Hz)RoHS*Qg (Max.) (nC) 18 Sink to Lead Creepage Distance = 4.8 mmCOMPLIANTQgs (nC) 3.0 P-ChannelQgd (nC) 9.0 175 C Operating TemperatureConfiguration
8.7. Size:1448K vishay
irfi9520g irfi9520gpbf sihfi9520g.pdf
IRFI9520G, SiHFI9520GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) - 100 High Voltage Isolation = 2.5 kVRMS (t = 60 s;AvailableRDS(on) ()VGS = - 10 V 0.60f = 60 Hz)RoHS*Qg (Max.) (nC) 18 Sink to Lead Creepage Distance = 4.8 mmCOMPLIANTQgs (nC) 3.0 P-ChannelQgd (nC) 9.0 175 C Operating TemperatureConfiguration
8.8. Size:944K vishay
irfi9540g-pbf sihfi9540g.pdf
IRFI9540G, SiHFI9540GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) - 100 High Voltage Isolation = 2.5 kVRMS (t = 60 s;Availablef = 60 Hz)RDS(on) ()VGS = - 10 V 0.20RoHS* Sink to Lead Creepage Dist. = 4.8 mmQg (Max.) (nC) 61 COMPLIANT P-ChannelQgs (nC) 14 175 C Operating TemperatureQgd (nC) 29 Dynamic dV/dt
8.9. Size:943K vishay
irfi9540g sihfi9540g.pdf
IRFI9540G, SiHFI9540GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) - 100 High Voltage Isolation = 2.5 kVRMS (t = 60 s;Availablef = 60 Hz)RDS(on) ()VGS = - 10 V 0.20RoHS* Sink to Lead Creepage Dist. = 4.8 mmQg (Max.) (nC) 61 COMPLIANT P-ChannelQgs (nC) 14 175 C Operating TemperatureQgd (nC) 29 Dynamic dV/dt
8.10. Size:2870K cn vbsemi
irfi9540gp.pdf
IRFI9540GPwww.VBsemi.twP-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A) Qg (Typ.)Definition0.220 at VGS = - 10 V - 12 TrenchFET Power MOSFET- 100 11.70.230 at VGS = - 4.5 V - 10 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Power Switch DC/DC C
Otros transistores... IRFI820A
, IRFI820G
, IRFI830A
, IRFI830G
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, IRFI840G
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, IRFI9520N
, 2N7002
, IRFI9540N
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, IRFI9Z34N
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.
History: H01N60SJ
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