IRFI9530G MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRFI9530G
Тип транзистора: MOSFET
Полярность: P
Pdⓘ - Максимальная рассеиваемая мощность: 42 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 7.7 A
Tjⓘ - Максимальная температура канала: 175 °C
Qgⓘ - Общий заряд затвора: 38(max) nC
trⓘ - Время нарастания: 52 ns
Cossⓘ - Выходная емкость: 340 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.3 Ohm
Тип корпуса: TO220F
IRFI9530G Datasheet (PDF)
irfi9530gpbf.pdf
PD - 94932IRFI9530GPbF Lead-Free1/8/04Document Number: 91163 www.vishay.com1IRFI9530GPbFDocument Number: 91163 www.vishay.com2IRFI9530GPbFDocument Number: 91163 www.vishay.com3IRFI9530GPbFDocument Number: 91163 www.vishay.com4IRFI9530GPbFDocument Number: 91163 www.vishay.com5IRFI9530GPbFDocument Number: 91163 www.vishay.com6IRFI9530GPbFTO-220
irfi9530g sihfi9530g.pdf
IRFI9530G, SiHFI9530GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) - 100 High Voltage Isolation = 2.5 kVRMS (t = 60 s;Availablef = 60 Hz)RDS(on) ()VGS = - 10 V 0.30RoHS* Sink to Lead Creepage Distance = 4.8 mmQg (Max.) (nC) 38 COMPLIANT P-ChannelQgs (nC) 6.8 175 C Operating TemperatureQgd (nC) 21 Dynamic dV/
irfi9530gpbf sihfi9530g.pdf
IRFI9530G, SiHFI9530GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) - 100 High Voltage Isolation = 2.5 kVRMS (t = 60 s;Availablef = 60 Hz)RDS(on) ()VGS = - 10 V 0.30RoHS* Sink to Lead Creepage Distance = 4.8 mmQg (Max.) (nC) 38 COMPLIANT P-ChannelQgs (nC) 6.8 175 C Operating TemperatureQgd (nC) 21 Dynamic dV/
irfi9530g.pdf
IRFI9530Gwww.VBsemi.twP-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A) Qg (Typ.)Definition0.220 at VGS = - 10 V - 12 TrenchFET Power MOSFET- 100 11.70.230 at VGS = - 4.5 V - 10 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Power Switch DC/DC Co
irfi9540n.pdf
PD - 9.1487BIRFI9540NPRELIMINARYHEXFET Power MOSFET Advanced Process TechnologyD Isolated PackageVDSS = -100V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mmRDS(on) = 0.117 P-ChannelG Fully Avalanche RatedID = -15ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveext
irfi9540g.pdf
PD - 95609IRFI9540GPbF Lead-Free7/29/03Document Number: 91164 www.vishay.com1IRFI9540GPbFDocument Number: 91164 www.vishay.com2IRFI9540GPbFDocument Number: 91164 www.vishay.com3IRFI9540GPbFDocument Number: 91164 www.vishay.com4IRFI9540GPbFDocument Number: 91164 www.vishay.com5IRFI9540GPbFDocument Number: 91164 www.vishay.com6IRFI9540GPbFPeak
irfi9520gpbf.pdf
PD- 95391IRFI9520GPbF Lead-Free06/10/04Document Number: 91162 www.vishay.com1IRFI9520GPbFDocument Number: 91162 www.vishay.com2IRFI9520GPbFDocument Number: 91162 www.vishay.com3IRFI9520GPbFDocument Number: 91162 www.vishay.com4IRFI9520GPbFDocument Number: 91162 www.vishay.com5IRFI9520GPbFDocument Number: 91162 www.vishay.com6IRFI9520GPbFDocum
irfi9520n.pdf
PD - 9.1527IRFI9520NPRELIMINARYHEXFET Power MOSFET Advanced Process TechnologyD Isolated PackageVDSS = -100V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mmRDS(on) = 0.48 P-ChannelG Fully Avalanche RatedID = -5.5ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextr
irfi9520g sihfi9520g.pdf
IRFI9520G, SiHFI9520GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) - 100 High Voltage Isolation = 2.5 kVRMS (t = 60 s;AvailableRDS(on) ()VGS = - 10 V 0.60f = 60 Hz)RoHS*Qg (Max.) (nC) 18 Sink to Lead Creepage Distance = 4.8 mmCOMPLIANTQgs (nC) 3.0 P-ChannelQgd (nC) 9.0 175 C Operating TemperatureConfiguration
irfi9520g irfi9520gpbf sihfi9520g.pdf
IRFI9520G, SiHFI9520GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) - 100 High Voltage Isolation = 2.5 kVRMS (t = 60 s;AvailableRDS(on) ()VGS = - 10 V 0.60f = 60 Hz)RoHS*Qg (Max.) (nC) 18 Sink to Lead Creepage Distance = 4.8 mmCOMPLIANTQgs (nC) 3.0 P-ChannelQgd (nC) 9.0 175 C Operating TemperatureConfiguration
irfi9540g-pbf sihfi9540g.pdf
IRFI9540G, SiHFI9540GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) - 100 High Voltage Isolation = 2.5 kVRMS (t = 60 s;Availablef = 60 Hz)RDS(on) ()VGS = - 10 V 0.20RoHS* Sink to Lead Creepage Dist. = 4.8 mmQg (Max.) (nC) 61 COMPLIANT P-ChannelQgs (nC) 14 175 C Operating TemperatureQgd (nC) 29 Dynamic dV/dt
irfi9540g sihfi9540g.pdf
IRFI9540G, SiHFI9540GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) - 100 High Voltage Isolation = 2.5 kVRMS (t = 60 s;Availablef = 60 Hz)RDS(on) ()VGS = - 10 V 0.20RoHS* Sink to Lead Creepage Dist. = 4.8 mmQg (Max.) (nC) 61 COMPLIANT P-ChannelQgs (nC) 14 175 C Operating TemperatureQgd (nC) 29 Dynamic dV/dt
irfi9540gp.pdf
IRFI9540GPwww.VBsemi.twP-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A) Qg (Typ.)Definition0.220 at VGS = - 10 V - 12 TrenchFET Power MOSFET- 100 11.70.230 at VGS = - 4.5 V - 10 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Power Switch DC/DC C
Другие MOSFET... IRFI820A , IRFI820G , IRFI830A , IRFI830G , IRFI840A , IRFI840G , IRFI840GLC , IRFI9520N , IRF1405 , IRFI9540N , IRFI9620G , IRFI9630G , IRFI9634G , IRFI9640G , IRFI9Z24N , IRFI9Z34N , IRFIB5N65A .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918