AP40P03GJ-HF Todos los transistores

 

AP40P03GJ-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP40P03GJ-HF
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 31.3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 30 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 56 nS
   Cossⓘ - Capacitancia de salida: 280 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.028 Ohm
   Paquete / Cubierta: TO251
 

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AP40P03GJ-HF Datasheet (PDF)

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 ap40p03gh-hf ap40p03gj-hf.pdf pdf_icon

AP40P03GJ-HF

AP40P03GH/J-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 28m Fast Switching Characteristic ID -30AG RoHS CompliantSDescriptionGDThe TO-252 package is widely preferred for all commercial-industrialSTO-252(H)surface mount applications an

 5.1. Size:809K  cn vbsemi
 ap40p03gj.pdf pdf_icon

AP40P03GJ-HF

AP40P03GJwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) () Qg (Typ.)ID (A) TrenchFET Gen III Power MOSFET0.07 at VGS = 10 V 53 100 % Rg TestedRoHS30 19 nCCOMPLIANT 100 % UIS Tested0.09 at VGS = 4.5 V 48APPLICATIONSTO-251 DC/DC ConversionD- System PowerGSN-Channel MOSFET G D STo

 6.1. Size:95K  ape
 ap40p03gi-hf.pdf pdf_icon

AP40P03GJ-HF

AP40P03GI-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 28m Fast Switching Characteristic ID -30AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, rugged

 6.2. Size:216K  ape
 ap40p03gh.pdf pdf_icon

AP40P03GJ-HF

AP40P03GH/JRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 28m Fast Switching Characteristic ID -30AGSDescriptionGDThe TO-252 package is widely preferred for all commercial-industrialSTO-252(H)surface mount applications and suited for low volt

MOSTRAR MÁS

Otros transistores... AP4002H-HF , AP4002J-HF , AP4002T , AP4036AGM-HF , AP40N03GH-HF , AP40N03GJ-HF , AP40N03GP-HF , AP40P03GH-HF , AON7410 , AP40T03GH-HF , AP40T03GI-HF , AP40T03GJ-HF , AP40T03GP-HF , AP40T03GS-HF , AP40U03GH , AP4224GM-HF , AP4226AGM-HF .

History: UPA1950 | LSB55R050GT | BSL207SP | S85N042RP | HM10P10D | FDU6688

 

 
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