AP40P03GJ-HF Todos los transistores

 

AP40P03GJ-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP40P03GJ-HF

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 31.3 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 30 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 56 nS

Cossⓘ - Capacitancia de salida: 280 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.028 Ohm

Encapsulados: TO251

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AP40P03GJ-HF datasheet

 ..1. Size:216K  ape
ap40p03gh-hf ap40p03gj-hf.pdf pdf_icon

AP40P03GJ-HF

AP40P03GH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 28m Fast Switching Characteristic ID -30A G RoHS Compliant S Description G D The TO-252 package is widely preferred for all commercial-industrial S TO-252(H) surface mount applications an

 5.1. Size:809K  cn vbsemi
ap40p03gj.pdf pdf_icon

AP40P03GJ-HF

AP40P03GJ www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) Qg (Typ.) ID (A) TrenchFET Gen III Power MOSFET 0.07 at VGS = 10 V 53 100 % Rg Tested RoHS 30 19 nC COMPLIANT 100 % UIS Tested 0.09 at VGS = 4.5 V 48 APPLICATIONS TO-251 DC/DC Conversion D - System Power G S N-Channel MOSFET G D S To

 6.1. Size:95K  ape
ap40p03gi-hf.pdf pdf_icon

AP40P03GJ-HF

AP40P03GI-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 28m Fast Switching Characteristic ID -30A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, rugged

 6.2. Size:216K  ape
ap40p03gh.pdf pdf_icon

AP40P03GJ-HF

AP40P03GH/J RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 28m Fast Switching Characteristic ID -30A G S Description G D The TO-252 package is widely preferred for all commercial-industrial S TO-252(H) surface mount applications and suited for low volt

Otros transistores... AP4002H-HF , AP4002J-HF , AP4002T , AP4036AGM-HF , AP40N03GH-HF , AP40N03GJ-HF , AP40N03GP-HF , AP40P03GH-HF , SPP20N60C3 , AP40T03GH-HF , AP40T03GI-HF , AP40T03GJ-HF , AP40T03GP-HF , AP40T03GS-HF , AP40U03GH , AP4224GM-HF , AP4226AGM-HF .

 

 

 


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