AP40P03GJ-HF
MOSFET. Datasheet pdf. Equivalent
Type Designator: AP40P03GJ-HF
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 31.3
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 30
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 14
nC
trⓘ - Rise Time: 56
nS
Cossⓘ -
Output Capacitance: 280
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.028
Ohm
Package:
TO251
AP40P03GJ-HF
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AP40P03GJ-HF
Datasheet (PDF)
..1. Size:216K ape
ap40p03gh-hf ap40p03gj-hf.pdf
AP40P03GH/J-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 28m Fast Switching Characteristic ID -30AG RoHS CompliantSDescriptionGDThe TO-252 package is widely preferred for all commercial-industrialSTO-252(H)surface mount applications an
5.1. Size:809K cn vbsemi
ap40p03gj.pdf
AP40P03GJwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) () Qg (Typ.)ID (A) TrenchFET Gen III Power MOSFET0.07 at VGS = 10 V 53 100 % Rg TestedRoHS30 19 nCCOMPLIANT 100 % UIS Tested0.09 at VGS = 4.5 V 48APPLICATIONSTO-251 DC/DC ConversionD- System PowerGSN-Channel MOSFET G D STo
6.1. Size:95K ape
ap40p03gi-hf.pdf
AP40P03GI-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 28m Fast Switching Characteristic ID -30AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, rugged
6.2. Size:216K ape
ap40p03gh.pdf
AP40P03GH/JRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 28m Fast Switching Characteristic ID -30AGSDescriptionGDThe TO-252 package is widely preferred for all commercial-industrialSTO-252(H)surface mount applications and suited for low volt
6.3. Size:166K ape
ap40p03gi.pdf
AP40P03GI-HFHalogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower On-resistance D BVDSS -30V Simple Drive Requirement RDS(ON) 28m Fast Switching Characteristic ID -30AG RoHS Compliant & Halogen-FreeSDescriptionAP40P03 series are from Advanced Power innova
6.4. Size:117K ape
ap40p03gp.pdf
AP40P03GPRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower Gate Charge BVDSS -30V Simple Drive Requirement RDS(ON) 28m Fast Switching Characteristic ID -30AGSDescriptionThe Advanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, ruggedized device design, lowon-resist
6.5. Size:846K cn vbsemi
ap40p03gh.pdf
AP40P03GHwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.018 at VGS = - 10 V - 40 TrenchFET Power MOSFET- 30 13 nC 100 % Rg Tested0.025 at VGS = - 4.5 V - 35APPLICATIONS Load Switch Battery SwitchSTO-252 GDG D S P-Channel MOSFETA
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