AP4228GM-HF Todos los transistores

 

AP4228GM-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP4228GM-HF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 6.8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 8 nS

Cossⓘ - Capacitancia de salida: 80 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.026 Ohm

Encapsulados: SO8

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AP4228GM-HF datasheet

 ..1. Size:198K  ape
ap4228gm-hf.pdf pdf_icon

AP4228GM-HF

AP4228GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance BVDSS 30V D2 D2 D1 Simple Drive Requirement RDS(ON) 26m D1 Fast Switching Characteristic ID 6.8A S2G2 RoHS Compliant G1 SO-8 S1 D2 D1 Description G2 G1 Advanced Power MOSFETs from APEC provide the designer with the best combination of

 6.1. Size:227K  ape
ap4228gm.pdf pdf_icon

AP4228GM-HF

AP4228GM RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance BVDSS 30V D2 D2 D1 Simple Drive Requirement RDS(ON) 26m D1 Fast Switching Characteristic ID 6.8A S2G2 G1 SO-8 S1 D2 D1 Description G2 G1 Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, S1

 6.2. Size:851K  cn vbsemi
ap4228gm.pdf pdf_icon

AP4228GM-HF

AP4228GM www.VBsemi.tw Dual N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.022 at VGS = 10 V TrenchFET Power MOSFET 6.8 30 15 nC 100 % UIS Tested 0.026 at VGS = 4.5 V 6.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Set Top Box

 9.1. Size:74K  ape
ap4224lgm-hf-pre.pdf pdf_icon

AP4228GM-HF

AP4224LGM-HF Preliminary Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Low On-Resistance BVDSS 20V D2 D2 D1 Capable of 2.5V Gate Drive RDS(ON) 14m D1 Dual N MOSFET Package ID 10A G2 S2 RoHS Compliant & Halogen-Free G1 SO-8 S1 Description Advanced Power MOSFETs from APEC provide the designer D2 D1 with the best combination of

Otros transistores... AP40T03GI-HF , AP40T03GJ-HF , AP40T03GP-HF , AP40T03GS-HF , AP40U03GH , AP4224GM-HF , AP4226AGM-HF , AP4226GM-HF , IRF530 , AP4407GP-HF , AP4407GS-HF , AP4407S , AP4409AGEH-HF , AP4409AGEM-HF , AP4409AGM-HF , AP9990GI-HF , AP9994AGP-HF .

History: ELM56801EA | ELM57801GA | AOD514 | SDF9130

 

 

 


History: ELM56801EA | ELM57801GA | AOD514 | SDF9130

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