AP4228GM-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP4228GM-HF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 2 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 6.8 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 8 nS
Cossⓘ - Capacitancia de salida: 80 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.026 Ohm
Encapsulados: SO8
Búsqueda de reemplazo de AP4228GM-HF MOSFET
- Selecciónⓘ de transistores por parámetros
AP4228GM-HF datasheet
..1. Size:198K ape
ap4228gm-hf.pdf 
AP4228GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance BVDSS 30V D2 D2 D1 Simple Drive Requirement RDS(ON) 26m D1 Fast Switching Characteristic ID 6.8A S2G2 RoHS Compliant G1 SO-8 S1 D2 D1 Description G2 G1 Advanced Power MOSFETs from APEC provide the designer with the best combination of
6.1. Size:227K ape
ap4228gm.pdf 
AP4228GM RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance BVDSS 30V D2 D2 D1 Simple Drive Requirement RDS(ON) 26m D1 Fast Switching Characteristic ID 6.8A S2G2 G1 SO-8 S1 D2 D1 Description G2 G1 Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, S1
6.2. Size:851K cn vbsemi
ap4228gm.pdf 
AP4228GM www.VBsemi.tw Dual N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.022 at VGS = 10 V TrenchFET Power MOSFET 6.8 30 15 nC 100 % UIS Tested 0.026 at VGS = 4.5 V 6.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Set Top Box
9.1. Size:74K ape
ap4224lgm-hf-pre.pdf 
AP4224LGM-HF Preliminary Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Low On-Resistance BVDSS 20V D2 D2 D1 Capable of 2.5V Gate Drive RDS(ON) 14m D1 Dual N MOSFET Package ID 10A G2 S2 RoHS Compliant & Halogen-Free G1 SO-8 S1 Description Advanced Power MOSFETs from APEC provide the designer D2 D1 with the best combination of
9.2. Size:95K ape
ap4224gm-hf.pdf 
AP4224GM-HF Halogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Low On-Resistance BVDSS 30V D2 D2 D1 Simple Drive Requirement RDS(ON) 14m D1 Dual N MOSFET Package ID 10A G2 S2 RoHS Compliant & Halogen-Free G1 SO-8 S1 Description Advanced Power MOSFETs from APEC provide the D2 D1 designer with the best combinat
9.3. Size:206K ape
ap4226agm.pdf 
AP4226AGM RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-Resistance BVDSS 30V D2 D2 D1 Simple Drive Requirement RDS(ON) 18m D1 Dual N MOSFET Package ID 8.7A G2 S2 G1 SO-8 S1 Description D2 D1 Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized devic
9.4. Size:226K ape
ap4224lgm.pdf 
AP4224LGM Halogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Low On-Resistance BVDSS 20V D2 D2 D1 Capable of 2.5V Gate Drive RDS(ON) 24m D1 Dual N MOSFET Package ID 7.1A G2 S2 RoHS Compliant & Halogen-Free G1 S1 SO-8 Description AP4224 series are from Advanced Power innovated design and D2 D1 silicon process
9.5. Size:96K ape
ap4224gm.pdf 
AP4224GM Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-Resistance BVDSS 30V D2 D2 Simple Drive Requirement RDS(ON) 14m D1 D1 Dual N MOSFET Package ID 10A G2 RoHS Compliant S2 G1 SO-8 S1 Description The Advanced Power MOSFETs from APEC provide the D2 D1 designer with the best combination of fast swit
9.6. Size:94K ape
ap4226agm-hf.pdf 
AP4226AGM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-Resistance BVDSS 30V Simple Drive Requirement RDS(ON) 18m Dual N MOSFET Package ID 8.7A Halogen Free & RoHS Compliant Product D2 D2 D1 Description D1 Advanced Power MOSFETs from APEC provide the G2 designer with the best combination of fast switching,
9.7. Size:71K ape
ap4226gm.pdf 
AP4226GM Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-Resistance BVDSS 30V D2 D2 D1 Simple Drive Requirement RDS(ON) 18m D1 Dual N MOSFET Package ID 8.2A G2 S2 G1 SO-8 S1 Description D2 D1 The Advanced Power MOSFETs from APEC provide the designer with the bes
9.8. Size:57K ape
ap4226gm-hf.pdf 
AP4226GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-Resistance BVDSS 30V D2 D2 D1 Simple Drive Requirement RDS(ON) 18m D1 Dual N MOSFET Package ID 8.2A G2 S2 RoHS Compliant G1 S1 SO-8 Description D2 D1 Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switchi
9.9. Size:93K ape
ap4224agm.pdf 
AP4224AGM RoHS-compliant Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Low On-Resistance BVDSS 30V D2 D2 Simple Drive Requirement RDS(ON) 15m D1 D1 ID 9.2A G2 S2 G1 S1 SO-8 Description Advanced Power MOSFETs from APEC provide the D2 D1 designer with the best combination of fast switching, ruggedized device design, ultra low
9.10. Size:98K ape
ap4226bgm-hf.pdf 
AP4226BGM-HF Halogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Lower On-resistance BVDSS 30V D2 D2 D1 Simple Drive Requirement RDS(ON) 11m D1 Fast Switching Characteristic ID 10.7A G2 S2 Halogen Free & RoHS Compliant G1 SO-8 S1 Description D2 D1 Advanced Power MOSFETs from APEC provide the designer with the
Otros transistores... AP40T03GI-HF
, AP40T03GJ-HF
, AP40T03GP-HF
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, AP40U03GH
, AP4224GM-HF
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, IRF530
, AP4407GP-HF
, AP4407GS-HF
, AP4407S
, AP4409AGEH-HF
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, AP9990GI-HF
, AP9994AGP-HF
.
History: ELM56801EA
| ELM57801GA
| AOD514
| SDF9130