IRFI9630G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFI9630G
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 35 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 4.3 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 27 nS
Cossⓘ - Capacitancia de salida: 200 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.8 Ohm
Paquete / Cubierta: TO220F
Búsqueda de reemplazo de MOSFET IRFI9630G
IRFI9630G Datasheet (PDF)
irfi9630g.pdf
PD - 94851IRFI9630GPbF Lead-Free11/07/03Document Number: 91167 www.vishay.com1IRFI9630GPbFDocument Number: 91167 www.vishay.com2IRFI9630GPbFDocument Number: 91167 www.vishay.com3IRFI9630GPbFDocument Number: 91167 www.vishay.com4IRFI9630GPbFDocument Number: 91167 www.vishay.com5IRFI9630GPbFDocument Number: 91167 www.vishay.com6IRFI9630GPbFTO-2
irfi9630gpbf sihfi9630g.pdf
IRFI9630G, SiHFI9630GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) - 200 High Voltage Isolation = 2.5 kVRMS (t = 60 s,Availablef = 60 Hz) RDS(on) ()VGS = - 10 V 0.80RoHS* Sink to Lead Creepage Distance = 4.8 mmQg (Max.) (nC) 29 COMPLIANT P-ChannelQgs (nC) 5.4 Dynamic dV/dt RatingQgd (nC) 15 Low Thermal Resist
irfi9630g sihfi9630g.pdf
IRFI9630G, SiHFI9630GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) - 200 High Voltage Isolation = 2.5 kVRMS (t = 60 s,Availablef = 60 Hz) RDS(on) ()VGS = - 10 V 0.80RoHS* Sink to Lead Creepage Distance = 4.8 mmQg (Max.) (nC) 29 COMPLIANT P-ChannelQgs (nC) 5.4 Dynamic dV/dt RatingQgd (nC) 15 Low Thermal Resist
irfi9634g.pdf
PD - 95610IRFI9634GPbF Lead-Free7/29/04Document Number: 91168 www.vishay.com1IRFI9634GPbFDocument Number: 91168 www.vishay.com2IRFI9634GPbFDocument Number: 91168 www.vishay.com3IRFI9634GPbFDocument Number: 91168 www.vishay.com4IRFI9634GPbFDocument Number: 91168 www.vishay.com5IRFI9634GPbFDocument Number: 91168 www.vishay.com6IRFI9634GPbFDocum
irfi9634gpbf sihfi9634g.pdf
IRFI9634G, SiHFI9634GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Advanced Process TechnologyVDS (V) - 250 Dynamic dV/dt RatingRDS(on) ()VGS = - 10 V 1.0 150 C Operating TemperatureQg (Max.) (nC) 38 Fast SwitchingQgs (nC) 8.0 P-ChannelQgd (nC) 18 Fully Avalanche RatedConfiguration Single Lead (Pb)-free AvailableSDESCRIPTION
irfi9634g sihfi9634g.pdf
IRFI9634G, SiHFI9634GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Advanced Process TechnologyVDS (V) - 250 Dynamic dV/dt RatingRDS(on) ()VGS = - 10 V 1.0 150 C Operating TemperatureQg (Max.) (nC) 38 Fast SwitchingQgs (nC) 8.0 P-ChannelQgd (nC) 18 Fully Avalanche RatedConfiguration Single Lead (Pb)-free AvailableSDESCRIPTION
Otros transistores... IRFI830G , IRFI840A , IRFI840G , IRFI840GLC , IRFI9520N , IRFI9530G , IRFI9540N , IRFI9620G , 5N50 , IRFI9634G , IRFI9640G , IRFI9Z24N , IRFI9Z34N , IRFIB5N65A , IRFIB6N60A , IRFIB7N50A , IRFIBC20G .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918