AP9T15GJ-HF Todos los transistores

 

AP9T15GJ-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP9T15GJ-HF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 12.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
   |Id|ⓘ - Corriente continua de drenaje: 12.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 55 nS
   Cossⓘ - Capacitancia de salida: 70 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.05 Ohm
   Paquete / Cubierta: TO251

 Búsqueda de reemplazo de MOSFET AP9T15GJ-HF

 

Principales características: AP9T15GJ-HF

 ..1. Size:98K  ape
 ap9t15gh-hf ap9t15gj-hf.pdf pdf_icon

AP9T15GJ-HF

AP9T15GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 20V D Capable of 2.5V Gate Drive RDS(ON) 50m Single Drive Requirement ID 12.5A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the G D S TO-252(H) designer with the best combination of fast swi

 6.1. Size:98K  ape
 ap9t15gh ap9t15gj.pdf pdf_icon

AP9T15GJ-HF

AP9T15GH/J RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 20V D Capable of 2.5V Gate Drive RDS(ON) 50m Single Drive Requirement ID 12.5A G RoHS Compliant S Description Advanced Power MOSFETs from APEC provide the G D S TO-252(H) designer with the best combination of fast switching, ruggedi

 9.1. Size:98K  ape
 ap9t18gh-hf.pdf pdf_icon

AP9T15GJ-HF

AP9T18GH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 20V D Capable of 2.5V Gate Drive RDS(ON) 14m Fast Switching Characteristic ID 38A G RoHS Compliant & Halogen-Free S Description AP9T18 series are from Advanced Power innovated design and silicon process technology to achieve the lowest po

 9.2. Size:126K  ape
 ap9t18geh ap9t18gej.pdf pdf_icon

AP9T15GJ-HF

AP9T18GEH/J Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D G-S Diode embedded BVDSS 20V G Capable of 2.5V gate drive RDS(ON) 14m Surface mount package ID 40A RoHS Compliant S Description The Advanced Power MOSFETs from APEC provide the G D S designer with the best combination of fast switching, TO-252(H) rugg

MOSTRAR MÁS

Otros transistores... AP9997GK-HF , AP9997GP , AP9998GI-HF , AP99LT06GI-HF , AP99LT06GP-HF , AP99LT06GS-HF , AP99T03GR-HF , AP9T15GH-HF , 18N50 , AP9U18GH , AP4410AGM-HF , AP4411GM-HF , AP4413GM-HF , AP4415GH-HF , AP4415GJ-HF , AP4424GM-HF , AP4433GH-HF .

 

 
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