AP4501GM-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP4501GM-HF
Tipo de FET: MOSFET
Polaridad de transistor: NP
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 2 W
Voltaje máximo drenador - fuente |Vds|: 30 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 7(5.3) A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 3 V
Carga de la puerta (Qg): 8 nC
Resistencia entre drenaje y fuente RDS(on): 0.028(0.05) Ohm
Paquete / Cubierta: SO8
Búsqueda de reemplazo de MOSFET AP4501GM-HF
AP4501GM-HF Datasheet (PDF)
ap4501gm-hf.pdf
AP4501GM-HFHalogen-Free ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 30VD2D2 Low On-resistance RDS(ON) 28mD1D1 Fast Switching Performance ID 7AG2 RoHS Compliant & Halogen-Free P-CH BVDSS -30VS2G1S1SO-8 RDS(ON) 50mDescription ID -5.3AAdvanced Power MOSFETs from APEC pro
ap4501gm.pdf
AP4501GMRoHS-compliant ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 30VD2D2 Low On-resistance D1 RDS(ON) 28mD1 Fast Switching Performance ID 7AG2S2 P-CH BVDSS -30VG1S1SO-8RDS(ON) 50mDescription ID -5.3AAdvanced Power MOSFETs from APEC provide thedesigner with the best com
ap4501gd.pdf
AP4501GDPb Free Plating ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Low Gate Charge N-CH BVDSS 30VD2D2D1 Fast Switching Speed RDS(ON) 28mD1 PDIP-8 Package ID 7A RoHS Compliant P-CH BVDSS -30VG2S2RDS(ON) 50mPDIP-8G1S1ID -5.3ADescriptionThe Advanced Power MOSFETs from APEC provide thedesigner with t
ap4501gh-hf.pdf
AP4501GH-HFHalogen-Free ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 30VD1/D2 Good Thermal Performance RDS(ON) 18m Fast Switching Performance ID 10.2AS1G1S2 Halogen-Free Product P-CH BVDSS -30VG2RDS(ON) 50mTO-252-4LDescription ID -6.4AAdvanced Power MOSFETs from APEC provi
ap4501gsd.pdf
AP4501GSDPb Free Plating ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFETD2Simple Drive Requirement N-CH BVDSS 30V D2D1Low On-resistance D1 RDS(ON) 27m Fast Switching Characteristic ID 7A G2P-CH BVDSS -30VS2PDIP-8G1RDS(ON) 49mS1Description ID -5AThe Advanced Power
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