AP4511GED MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AP4511GED
   Tipo de FET: MOSFET
   Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
   |Id|ⓘ - Corriente continua de drenaje: 6(5) A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3(2.5) V
   Qgⓘ - Carga de la puerta: 8.2 nC
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.028(0.042) Ohm
   Paquete / Cubierta: PDIP8

Búsqueda de reemplazo de MOSFET AP4511GED

AP4511GED Datasheet (PDF)

..1. Size:119K ape
ap4511ged.pdf

AP4511GEDPb Free Plating ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFETD2 Simple Drive Requirement N-CH BVDSS 40VD2D1 Lower Gate Charge RDS(ON) 28mD1 Fast Switching Performance ID 6AG2 RoHS Compliant P-CH BVDSS -40VS2PDIP-8G1S1RDS(ON) 42mDescription ID -5AThe Advanced Power MOSFETs from APEC provide the

0.1. Size:120K ape
ap4511ged-hf.pdf

AP4511GED-HFHalogen-Free ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFETD2 Simple Drive Requirement N-CH BVDSS 40VD2D1 Lower Gate Charge RDS(ON) 28mD1 Fast Switching Performance ID 6AG2 RoHS Compliant & Halogen-Free P-CH BVDSS -40VS2PDIP-8G1S1RDS(ON) 42mDescription ID -5AAdvanced Power MOSFETs from APEC

7.1. Size:201K ape
ap4511gm.pdf

AP4511GM-HFHalogen-Free Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET N-CH BVDSS 35V Simple Drive Requirement D2D2 RDS(ON) 25m Low On-resistance D1 D1 ID 7A Fast Switching Performance G2S2 RoHS Compliant & Halogen-Free P-CH BVDSS -35VG1S1SO-8RDS(ON)

7.2. Size:85K ape
ap4511gm-hf.pdf

AP4511GM-HFHalogen-Free ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 35VD2D2 Low On-resistance RDS(ON) 25mD1D1 Fast Switching Performance ID 7AG2S2 RoHS Compliant & Halogen-Free P-CH BVDSS -35VG1S1SO-8RDS(ON) 40mDescription ID -6.1AAdvanced Power MOSFETs from APEC pr

7.3. Size:195K ape
ap4511gh.pdf

AP4511GHRoHS-compliant ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 35VD1/D2 Good Thermal Performance RDS(ON) 30m Fast Switching Performance ID 15AS1G1P-CH BVDSS -35VS2G2RDS(ON) 48mTO-252-4LDescription ID -12AAdvanced Power MOSFETs from APEC provide theD1D2designer with

7.4. Size:121K ape
ap4511gh-hf.pdf

AP4511GH-HFHalogen-Free ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement D1/D2 N-CH BVDSS 35V Good Thermal Performance RDS(ON) 30m Fast Switching Performance ID 15AS1G1S2 RoHS Compliant P-CH BVDSS -35VG2RDS(ON) 48mTO-252-4LDescription ID -12AAdvanced Power MOSFETs from APEC provide the d

7.5. Size:152K ape
ap4511gh-a.pdf

AP4511GH-ARoHS-compliant ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 35VD1/D2 Good Thermal Performance RDS(ON) 27m Fast Switching Performance ID 8.6AS1P-CH BVDSS -35VG1S2G2RDS(ON) 45mDescription ID -6.7ATO-252-4LThe Advanced Power MOSFETs from APEC provide theD1D2desig

7.6. Size:156K ape
ap4511gd.pdf

AP4511GDRoHS-compliant ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFETD2 Low Gate Charge N-CH BVDSS 35VD2D1D1 Fast Switching Speed RDS(ON) 25m PDIP-8 Package ID 7AG2P-CH BVDSS -35VS2PDIP-8G1S1RDS(ON) 40mDescription ID -6.1AAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fa

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