AP4511GED MOSFET. Datasheet pdf. Equivalent
Type Designator: AP4511GED
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pdⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3(2.5) V
|Id|ⓘ - Maximum Drain Current: 6(5) A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 8.2 nC
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.028(0.042) Ohm
Package: PDIP8
AP4511GED Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AP4511GED Datasheet (PDF)
ap4511ged.pdf
AP4511GEDPb Free Plating ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFETD2 Simple Drive Requirement N-CH BVDSS 40VD2D1 Lower Gate Charge RDS(ON) 28mD1 Fast Switching Performance ID 6AG2 RoHS Compliant P-CH BVDSS -40VS2PDIP-8G1S1RDS(ON) 42mDescription ID -5AThe Advanced Power MOSFETs from APEC provide the
ap4511ged-hf.pdf
AP4511GED-HFHalogen-Free ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFETD2 Simple Drive Requirement N-CH BVDSS 40VD2D1 Lower Gate Charge RDS(ON) 28mD1 Fast Switching Performance ID 6AG2 RoHS Compliant & Halogen-Free P-CH BVDSS -40VS2PDIP-8G1S1RDS(ON) 42mDescription ID -5AAdvanced Power MOSFETs from APEC
ap4511gm.pdf
AP4511GM-HFHalogen-Free Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET N-CH BVDSS 35V Simple Drive Requirement D2D2 RDS(ON) 25m Low On-resistance D1 D1 ID 7A Fast Switching Performance G2S2 RoHS Compliant & Halogen-Free P-CH BVDSS -35VG1S1SO-8RDS(ON)
ap4511gm-hf.pdf
AP4511GM-HFHalogen-Free ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 35VD2D2 Low On-resistance RDS(ON) 25mD1D1 Fast Switching Performance ID 7AG2S2 RoHS Compliant & Halogen-Free P-CH BVDSS -35VG1S1SO-8RDS(ON) 40mDescription ID -6.1AAdvanced Power MOSFETs from APEC pr
ap4511gh.pdf
AP4511GHRoHS-compliant ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 35VD1/D2 Good Thermal Performance RDS(ON) 30m Fast Switching Performance ID 15AS1G1P-CH BVDSS -35VS2G2RDS(ON) 48mTO-252-4LDescription ID -12AAdvanced Power MOSFETs from APEC provide theD1D2designer with
ap4511gh-hf.pdf
AP4511GH-HFHalogen-Free ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement D1/D2 N-CH BVDSS 35V Good Thermal Performance RDS(ON) 30m Fast Switching Performance ID 15AS1G1S2 RoHS Compliant P-CH BVDSS -35VG2RDS(ON) 48mTO-252-4LDescription ID -12AAdvanced Power MOSFETs from APEC provide the d
ap4511gh-a.pdf
AP4511GH-ARoHS-compliant ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 35VD1/D2 Good Thermal Performance RDS(ON) 27m Fast Switching Performance ID 8.6AS1P-CH BVDSS -35VG1S2G2RDS(ON) 45mDescription ID -6.7ATO-252-4LThe Advanced Power MOSFETs from APEC provide theD1D2desig
ap4511gd.pdf
AP4511GDRoHS-compliant ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFETD2 Low Gate Charge N-CH BVDSS 35VD2D1D1 Fast Switching Speed RDS(ON) 25m PDIP-8 Package ID 7AG2P-CH BVDSS -35VS2PDIP-8G1S1RDS(ON) 40mDescription ID -6.1AAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fa
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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