AP4525GEH-HF Todos los transistores

 

AP4525GEH-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP4525GEH-HF
   Tipo de FET: MOSFET
   Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 10.4 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
   |Id|ⓘ - Corriente continua de drenaje: 15(12) A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.028(0.042) Ohm
   Paquete / Cubierta: TO252-4L
 

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AP4525GEH-HF datasheet

 ..1. Size:115K  ape
 ap4525geh-hf.pdf pdf_icon

AP4525GEH-HF

AP4525GEH-HF Halogen-Free Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 40V D1/D2 Good Thermal Performance RDS(ON) 28m Fast Switching Performance ID 15A S1 G1 S2 RoHS Compliant P-CH BVDSS -40V G2 RDS(ON) 42m TO-252-4L Description ID -12A Advanced Power MOSFETs from APEC provide the

 5.1. Size:192K  ape
 ap4525geh.pdf pdf_icon

AP4525GEH-HF

AP4525GEH RoHS-compliant Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 40V D1/D2 Good Thermal Performance RDS(ON) 28m Fast Switching Performance ID 15A S1 G1 S2 P-CH BVDSS -40V G2 RDS(ON) 42m TO-252-4L Description ID -12A Advanced Power MOSFETs from APEC provide the designer with the b

 5.2. Size:1242K  cn vbsemi
 ap4525geh.pdf pdf_icon

AP4525GEH-HF

AP4525GEH www.VBsemi.tw N- and P-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET N-CHANNEL P-CHANNEL d 100 % Rg and UIS Tested VDS (V) 40 - 40 RDS(on) ( ) at VGS = 10 V 0.014 0.014 RDS(on) ( ) at VGS = 4.5 V 0.016 0.016 APPLICATIONS ID (A) 50 - 50 CCFL Inverter Configuration N- and P-Pair TO-252-4L D-PAK D1/D2 D1/D2 Top V

 6.1. Size:202K  ape
 ap4525gem.pdf pdf_icon

AP4525GEH-HF

AP4525GEM-HF Halogen-Free Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET N-CH BVDSS 40V Simple Drive Requirement D2 D2 D1 RDS(ON) 28m Low On-resistance D1 ID 6A Fast Switching Performance G2 S2 RoHS Compliant & Halogen-Free P-CH BVDSS -40V G1 S1 SO-8 RDS(ON

MOSTRAR MÁS

Otros transistores... AP4435GJ , AP4453AGYT-HF , AP4501AGM , AP4501GM-HF , AP4502GM-HF , AP4503GM-HF , AP4511GED , AP4511GH-HF , IRFB7545 , AP4533GEH-HF , AP4565GM , AP80T10AGP-HF , AP80T12GP-HF , AP9962AGH-HF , AP9962GM , AP9967GM-HF , AP9971AGH-HF .

History: GSM4401S | NCE40P05Y | JMSL1020AGDQ | PA210HVA | BUZ44A | APT50M60L2VR | NTTFS010N10MCL

 

 
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