AP9971AGJ-HF Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP9971AGJ-HF  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 34.7 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 22 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 22 nS

Cossⓘ - Capacitancia de salida: 90 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.036 Ohm

Encapsulados: TO251

  📄📄 Copiar 

 Búsqueda de reemplazo de AP9971AGJ-HF MOSFET

- Selecciónⓘ de transistores por parámetros

 

AP9971AGJ-HF datasheet

 ..1. Size:96K  ape
 ap9971agh-hf ap9971agj-hf.pdf pdf_icon

AP9971AGJ-HF

AP9971AGH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 60V Lower On-resistance RDS(ON) 36m Fast Switching Characteristic ID 22A G Halogen Free & RoHS Compliant S Description Advanced Power MOSFETs from APEC provide the designer with the G D S best combination of fast switchin

 5.1. Size:231K  ape
 ap9971agh ap9971agj.pdf pdf_icon

AP9971AGJ-HF

AP9971AGH/J RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 60V Lower On-resistance RDS(ON) 36m Fast Switching Characteristic ID 22A G S Description G Advanced Power MOSFETs from APEC provide the designer with D S TO-252(H) the best combination of fast switching, ruggedized device desig

 6.1. Size:197K  ape
 ap9971agp ap9971ags.pdf pdf_icon

AP9971AGJ-HF

AP9971AGS/P RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 60V Lower On-resistance RDS(ON) 36m Fast Switching Characteristic ID 22A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G TO-220(P) D ruggedized device design

 6.2. Size:168K  ape
 ap9971agd.pdf pdf_icon

AP9971AGJ-HF

AP9971AGD RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D2 Low On-resistance BVDSS 60V D2 D1 Fast Switching Speed RDS(ON) 50m D1 PDIP-8 Package ID 5A G2 S2 PDIP-8 G1 S1 Description D2 D1 Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design,

MOSTRAR MÁS

Otros transistores... AP4533GEH-HF, AP4565GM, AP80T10AGP-HF, AP80T12GP-HF, AP9962AGH-HF, AP9962GM, AP9967GM-HF, AP9971AGH-HF, AON6426, AP9971AGS-HF, AP9971GH-HF, AP9971GJ-HF, AP9974GS, AP9977AGH-HF, AP9980GH-HF, AP9980GJ-HF, AP9980GM-HF