AP9971AGJ-HF Specs and Replacement
Type Designator: AP9971AGJ-HF
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 34.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 22 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 22 nS
Cossⓘ - Output Capacitance: 90 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm
Package: TO251
AP9971AGJ-HF substitution
- MOSFET ⓘ Cross-Reference Search
AP9971AGJ-HF datasheet
ap9971agh-hf ap9971agj-hf.pdf
AP9971AGH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 60V Lower On-resistance RDS(ON) 36m Fast Switching Characteristic ID 22A G Halogen Free & RoHS Compliant S Description Advanced Power MOSFETs from APEC provide the designer with the G D S best combination of fast switchin... See More ⇒
ap9971agh ap9971agj.pdf
AP9971AGH/J RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 60V Lower On-resistance RDS(ON) 36m Fast Switching Characteristic ID 22A G S Description G Advanced Power MOSFETs from APEC provide the designer with D S TO-252(H) the best combination of fast switching, ruggedized device desig... See More ⇒
ap9971agp ap9971ags.pdf
AP9971AGS/P RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 60V Lower On-resistance RDS(ON) 36m Fast Switching Characteristic ID 22A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G TO-220(P) D ruggedized device design... See More ⇒
ap9971agd.pdf
AP9971AGD RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D2 Low On-resistance BVDSS 60V D2 D1 Fast Switching Speed RDS(ON) 50m D1 PDIP-8 Package ID 5A G2 S2 PDIP-8 G1 S1 Description D2 D1 Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ... See More ⇒
Detailed specifications: AP4533GEH-HF, AP4565GM, AP80T10AGP-HF, AP80T12GP-HF, AP9962AGH-HF, AP9962GM, AP9967GM-HF, AP9971AGH-HF, IRFP064N, AP9971AGS-HF, AP9971GH-HF, AP9971GJ-HF, AP9974GS, AP9977AGH-HF, AP9980GH-HF, AP9980GJ-HF, AP9980GM-HF
Keywords - AP9971AGJ-HF MOSFET specs
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