IRFI9Z34N MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFI9Z34N

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 37 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 55 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 14 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 55 nS

Cossⓘ - Capacitancia de salida: 280 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.1 Ohm

Encapsulados: TO220F

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IRFI9Z34N datasheet

 ..1. Size:120K  international rectifier
 irfi9z34n.pdf pdf_icon

IRFI9Z34N

PD - 9.1530A IRFI9Z34N HEXFET Power MOSFET Advanced Process Technology D Isolated Package VDSS = -55V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.10 P-Channel G Fully Avalanche Rated ID = -14A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-r

 6.1. Size:911K  international rectifier
 irfi9z34g.pdf pdf_icon

IRFI9Z34N

PD - 94866 IRFI9Z34GPbF Lead-Free 12/04/03 Document Number 91172 www.vishay.com 1 IRFI9Z34GPbF Document Number 91172 www.vishay.com 2 IRFI9Z34GPbF Document Number 91172 www.vishay.com 3 IRFI9Z34GPbF Document Number 91172 www.vishay.com 4 IRFI9Z34GPbF Document Number 91172 www.vishay.com 5 IRFI9Z34GPbF Document Number 91172 www.vishay.com 6 IRFI9Z34GPbF TO-2

 6.2. Size:1417K  vishay
 irfi9z34g-pbf sihfi9z34g.pdf pdf_icon

IRFI9Z34N

IRFI9Z34G, SiHFI9Z34G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) - 60 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available f = 60 Hz) RDS(on) ( )VGS = - 10 V 0.14 RoHS* Sink to Lead Creepage Distance = 4.8 mm Qg (Max.) (nC) 34 COMPLIANT P-Channel Qgs (nC) 9.9 175 C Operating Temperature Qgd (nC) 16 Dynamic dV/

 6.3. Size:1415K  vishay
 irfi9z34g sihfi9z34g.pdf pdf_icon

IRFI9Z34N

IRFI9Z34G, SiHFI9Z34G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) - 60 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available f = 60 Hz) RDS(on) ( )VGS = - 10 V 0.14 RoHS* Sink to Lead Creepage Distance = 4.8 mm Qg (Max.) (nC) 34 COMPLIANT P-Channel Qgs (nC) 9.9 175 C Operating Temperature Qgd (nC) 16 Dynamic dV/

MOSTRAR MÁS

Otros transistores... IRFI9520N, IRFI9530G, IRFI9540N, IRFI9620G, IRFI9630G, IRFI9634G, IRFI9640G, IRFI9Z24N, IRFZ44N, IRFIB5N65A, IRFIB6N60A, IRFIB7N50A, IRFIBC20G, IRFIBC30G, IRFIBC40G, IRFIBC40GLC, IRFIBE20G