AP9977AGH-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AP9977AGH-HF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 12.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 9 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 7 nC
   trⓘ - Tiempo de subida: 12 nS
   Cossⓘ - Capacitancia de salida: 35 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.1 Ohm
   Paquete / Cubierta: TO252

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AP9977AGH-HF Datasheet (PDF)

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ap9977agh-hf.pdf

AP9977AGH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS 60V Single Drive Requirement RDS(ON) 100m Fast Switching Characteristic ID 9AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching, GDSTO-2

5.1. Size:62K ape
ap9977agh.pdf

AP9977AGHRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge BVDSS 60VD Single Drive Requirement RDS(ON) 100m Fast Switching Characteristic ID 9AGSDescriptionAdvanced Power MOSFETs from APEC provide the designer with GDSTO-252(H)the best combination of fast switching, ruggedized device design,lo

6.1. Size:180K ape
ap9977agm.pdf

AP9977AGMRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Fast Switching Characteristic BVDSS 60VD2D2 Single Drive Requirement RDS(ON) 100mD1D1 Surface Mount Package ID 3.6AG2S2G1S1SO-8DescriptionAdvanced Power MOSFETs from APEC provide the designer withD2D1the best combination of fast switching, rug

8.1. Size:207K ape
ap9977gjv.pdf

AP9977GJVHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS 60V Simple Drive Requirement RDS(ON) 100m Fast Switching Performance ID 11AG RoHS Compliant & Halogen-FreeSDescriptionAP9977 series are from Advanced Power innovated design and siliconprocess technology to achieve the lowest possible

8.2. Size:101K ape
ap9977gh-hf ap9977gj-hf.pdf

AP9977GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge BVDSS 60VD Single Drive Requirement RDS(ON) 100m Surface Mount Package ID 11AG RoHS CompliantSDescriptionGAdvanced Power MOSFETs from APEC provide theDSTO-252(H)designer with the best combination of fast switching,ruggedized d

8.3. Size:212K ape
ap9977gm.pdf

AP9977GMRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance BVDSS 60VD2 Single Drive Requirement RDS(ON) 100mD2D1 Surface Mount Package ID 3.3AD1G2S2G1S1DescriptionD2D1Advanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device des

8.4. Size:181K ape
ap9977gm-hf.pdf

AP9977GM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance BVDSS 60VD2D2D1 Simple Drive Requirement RDS(ON) 100mD1 Surface Mount Package ID 3.3AG2S2 RoHS Compliant & Halogen-FreeG1S1SO-8DescriptionAP9977 series are from Advanced Power innovated design andD2D1silicon process tech

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