AP9977AGH-HF MOSFET. Datasheet pdf. Equivalent
Type Designator: AP9977AGH-HF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 12.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 9 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 7 nC
trⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 35 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
Package: TO252
AP9977AGH-HF Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AP9977AGH-HF Datasheet (PDF)
ap9977agh-hf.pdf
AP9977AGH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS 60V Single Drive Requirement RDS(ON) 100m Fast Switching Characteristic ID 9AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching, GDSTO-2
ap9977agh.pdf
AP9977AGHRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge BVDSS 60VD Single Drive Requirement RDS(ON) 100m Fast Switching Characteristic ID 9AGSDescriptionAdvanced Power MOSFETs from APEC provide the designer with GDSTO-252(H)the best combination of fast switching, ruggedized device design,lo
ap9977agm.pdf
AP9977AGMRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Fast Switching Characteristic BVDSS 60VD2D2 Single Drive Requirement RDS(ON) 100mD1D1 Surface Mount Package ID 3.6AG2S2G1S1SO-8DescriptionAdvanced Power MOSFETs from APEC provide the designer withD2D1the best combination of fast switching, rug
ap9977gjv.pdf
AP9977GJVHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS 60V Simple Drive Requirement RDS(ON) 100m Fast Switching Performance ID 11AG RoHS Compliant & Halogen-FreeSDescriptionAP9977 series are from Advanced Power innovated design and siliconprocess technology to achieve the lowest possible
ap9977gh-hf ap9977gj-hf.pdf
AP9977GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge BVDSS 60VD Single Drive Requirement RDS(ON) 100m Surface Mount Package ID 11AG RoHS CompliantSDescriptionGAdvanced Power MOSFETs from APEC provide theDSTO-252(H)designer with the best combination of fast switching,ruggedized d
ap9977gm.pdf
AP9977GMRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance BVDSS 60VD2 Single Drive Requirement RDS(ON) 100mD2D1 Surface Mount Package ID 3.3AD1G2S2G1S1DescriptionD2D1Advanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device des
ap9977gm-hf.pdf
AP9977GM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance BVDSS 60VD2D2D1 Simple Drive Requirement RDS(ON) 100mD1 Surface Mount Package ID 3.3AG2S2 RoHS Compliant & Halogen-FreeG1S1SO-8DescriptionAP9977 series are from Advanced Power innovated design andD2D1silicon process tech
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
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